Paper
29 June 2012 Results of proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC)
Elmar Platzgummer, Christof Klein, Hans Loeschner
Author Affiliations +
Abstract
First 50nm HP and 24nm iso line scanning stripe exposures with 1.4nm 1sigma stripe butting are shown of a proof-ofconcept electron multi-beam Mask Exposure Tool (eMET POC), operating the column with an Aperture Plate System (APS), providing 256k (k=1024) programmable beams of 20nm beam size and 50keV beam energy at substrate within 82μm × 82μm beam array fields. Multi-beam proximity effect correction (PEC) is shown with long range corrections by local dose adjustments. The capability of exposing OPC jog patterns down to 1nm jog height is demonstrated as well as the possibility to expose complex ILT (inverse lithography techniques) patterns at no loss of throughput. The possibility to use low sensitive pCAR resist material with 80μC/cm2 exposure dose is shown. The novel electron-optical column is suitable for Alpha, Beta and multi-generational HVM tools.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elmar Platzgummer, Christof Klein, and Hans Loeschner "Results of proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC)", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84410B (29 June 2012); https://doi.org/10.1117/12.978999
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KEYWORDS
Photomasks

Silicon

Semiconducting wafers

Code division multiplexing

Lithography

Diagnostics

Nanofabrication

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