Rectennas design using DG-MOSFETs

Raúl Rodríguez; B. González; J. García; M. Marrero-Martín; A. Hernández

doi:10.1117/12.2017149

28 May 2013 Rectennas design using DG-MOSFETs

Raúl Rodríguez, B. González, J. García, M. Marrero-Martín, A. Hernández

Proceedings Volume 8764, VLSI Circuits and Systems VI; 876404 (2013) https://doi.org/10.1117/12.2017149
Event: SPIE Microtechnologies, 2013, Grenoble, France

Abstract

The objective of this work is to study the possibility of implementing SOI rectennas for UWB RFIDs, with undoped Double Gate MOSFETs (DG-MOSFETs). For that purpose we use two commercial TCAD tools: Sentaurus Device (created by Synopsys), and ADS (created by Agilent) where in a large signal circuit model derived for the transistors is implemented with Verilog-A. Once the DG-MOSFETs output characteristics are fit, the rectennas performance at high frequencies is simulated; numerical and electrical results are successfully compared.

Citation Download Citation

Raúl Rodríguez, B. González, J. García, M. Marrero-Martín, and A. Hernández "Rectennas design using DG-MOSFETs", Proc. SPIE 8764, VLSI Circuits and Systems VI, 876404 (28 May 2013); https://doi.org/10.1117/12.2017149

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