Paper
11 September 2013 Properties study of ZnS thin films deposited on HgCdTe substrate by different methods
Pengxiao Xu, Guoqing Xu, Kaihui Chu, Nili Wang, Qing Zhou, Yidan Tang, Kefeng Zhang, Xiangyang Li
Author Affiliations +
Proceedings Volume 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications; 890742 (2013) https://doi.org/10.1117/12.2034530
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
ZnS thin films were prepared on HgCdTe substrates by thermal evaporation and megnetron sputtering deposition technique. The morphology, structure, composition, and optical properties of two kinds of ZnS thin films were studied by scanning electron microscope(SEM), X-ray diffraction(XRD), energy dispersive X-ray analysis(EDX) and fourier transform infrared(FTIR) spectrometer. Then the HgCdTe MIS devices using ZnS thin film as insulating layer were successfully fabricated. The C-V measurement of MIS devices was used to study electrical characteristics of the ZnS/HgCdTe interface. The experimental results show that, the ZnS thin films by thermal evaporation and megnetron sputtering both have good transmission characteristics in infrared waveband and close atomic ratios of Zn/S. The former one exhibits zincblende structure and a phenomenon of layer growth, but the latter one exhibits wurtzite structure and an obvious phenomenon of island growth. It is also found that, the former one has less fixed charge density than the latter one.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pengxiao Xu, Guoqing Xu, Kaihui Chu, Nili Wang, Qing Zhou, Yidan Tang, Kefeng Zhang, and Xiangyang Li "Properties study of ZnS thin films deposited on HgCdTe substrate by different methods", Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 890742 (11 September 2013); https://doi.org/10.1117/12.2034530
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KEYWORDS
Zinc

Thin films

Mercury cadmium telluride

Infrared radiation

Sputter deposition

Thin film deposition

Thin film devices

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