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A 30 Gb/s Ge waveguide photodetector was demonstrated and its reliability under elevated temperatures and high stress
biases were investigated. For different reverse biases, the slopes of the dark current increment versus stress bias time
curves were initiatively found to be the same and made the lifetime extrapolation feasible. The lifetime of the Ge
waveguide photodetector under different stress bias was predicted by using a simple extrapolation method. To maintain
the ten-year lifetime of the Ge waveguide photodetector, the bias voltage should be kept lower than -3V. For the first
time, the degradation mechanism under stress biases was analyzed in detail by the reaction-diffusion model. The
experimental results agree well to the theoretical derivation based on reaction-diffusion model.
Zhijuan Tu,Zhiping Zhou, andXingjun Wang
"Reliability considerations of high speed germanium waveguide photodetectors", Proc. SPIE 8982, Optical Components and Materials XI, 89820W (7 March 2014); https://doi.org/10.1117/12.2038324
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