Paper
16 December 2013 Highly (222)-oriented pyrochlore PZN-PT thin films prepared by pulsed laser deposition
H. L. Han, A. Y. Liu, L. L. Wei, P. Wang, F. T. Lin, W. Z. Shi, C. B. Jing
Author Affiliations +
Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90680U (2013) https://doi.org/10.1117/12.2053925
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
Highly (222)-oriented 90%Pb(Zn1/3Nb2/3)O3-10%PbTiO3(abbreviated PZN–PT) thin films, about 550nm in thickness, have been successfully grown on (111)Pt/Ti/SiO2/Si substrate by pulsed laser deposition method. Pure pyrochlore phase with highly (222)-preferred orientation, determined by X-ray diffraction, was formed in the PZN–PT thin films when the temperature of substrates is 550°C. FE-SEM investigation shows that the surface appearance and the cross section of the films are smooth and crack-free with some dispersive spherical protrusions. The dielectric constant and loss of the thin films were measured using an impedance analyzer (HP4194A). The dielectric constant ( εr ) and the dissipation factor ( tanδ ) at 1 kHz are 205 and 0.03, respectively.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. L. Han, A. Y. Liu, L. L. Wei, P. Wang, F. T. Lin, W. Z. Shi, and C. B. Jing "Highly (222)-oriented pyrochlore PZN-PT thin films prepared by pulsed laser deposition", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680U (16 December 2013); https://doi.org/10.1117/12.2053925
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KEYWORDS
Thin films

Dielectrics

Crystals

Pulsed laser deposition

Spherical lenses

Perovskite

Silicon

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