Low-voltage organic thin film transistors with solution processed hafnium oxide and polymer dielectrics

Biao Xu; Ping Wang; Jian Zhong

doi:10.1117/12.2242697

25 October 2016 Low-voltage organic thin film transistors with solution processed hafnium oxide and polymer dielectrics

Biao Xu, Ping Wang, Jian Zhong

Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 96861Q (2016) https://doi.org/10.1117/12.2242697
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China

Abstract

Low-voltage pentacene-based organic thin film transistors (OTFTs) are fabricated with solution-process hafnium oxide (HfO₂) as gate dielectric layer. The dielectric high-k HfO₂ film was deposited from the sol-gel solution prepared by dissolving HfCl₄(98%, Sigma-Aldrich) in ethanol at a proper concentration. We have investigated the effects of the insulating layer on device. As a result, the device with only HfO₂ gate dielectric exhibited a good performance with a threshold voltage of -0.88 V, a sub-threshold swing of 1.12 V/dec, and a high field-effect mobility of 1×10^-3 cm²/Vs. After employing a very thin PMMA film onto HfO₂, the performance of the devices with bilayer dielectrics shows a great improvement. The mobility of these OTFTs can be further boost up to 1.2×10^-2 cm²/Vs, and the sub-threshold swing reduced to 0.77 V/dec and the drain current on/off ratio increased almost 7 times. The PMMA insulator buffer layer can also effectively reduce gate leakage current. The results demonstrate that an appropriate polymer buffer layer is a favorable way to improve the performance of the OTFTs with good electrical stability.

Citation Download Citation

Biao Xu, Ping Wang, and Jian Zhong "Low-voltage organic thin film transistors with solution processed hafnium oxide and polymer dielectrics", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96861Q (25 October 2016); https://doi.org/10.1117/12.2242697

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