MOVPE-grown GaN-based tunnel junctions and optoelectronic devices

Tetsuya Takeuchi; Satoshi Kamiyama; Motoaki Iwaya

doi:10.1117/12.2608422

5 March 2022 MOVPE-grown GaN-based tunnel junctions and optoelectronic devices

Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya

Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010I (2022) https://doi.org/10.1117/12.2608422
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

We will provide our results on low resistive GaN-based tunnel junctions and optoelectronic devices grown by MOVPE. In order to obtain low resistive GaN-based tunnel junctions grown by MOVPE, we have pointed out that high impurity concentrations were required. We also found that large overlap with Mg/Si and small Mg segregation were key factors. The lowest contact resistivity value in our GaN tunnel junctions is now less than 1e-4 Ωcm2 over 8 kA/cm2. We have used such low GaN-based tunnel junctions in edge-emitting laser diodes and VCSELs, showing comparable laser characteristics to standard p-contact lasers.

Conference Presentation

Citation Download Citation

Tetsuya Takeuchi, Satoshi Kamiyama, and Motoaki Iwaya "MOVPE-grown GaN-based tunnel junctions and optoelectronic devices", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010I (5 March 2022); https://doi.org/10.1117/12.2608422

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