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21 March 2023 Gallium Nitride-based moiré photonic crystals for applications in low-threshold nano-lasers
Alexander Raun, Haoning Tang, Xueqi Ni, Eric Mazur, Evelyn L. Hu
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2648353
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Moiré photonic crystals can provide flat, dispersion-free bands that localize light with high Q-factors and low mode volumes, presenting opportunities to address nanoscale emitters with great specificity for applications in low-threshold nano-lasers. We report on the realization of moiré photonic crystal lasers in Gallium Nitride (GaN). We demonstrate fabrication of suspended moiré photonic crystals in GaN with embedded indium gallium nitride quantum wells and quantum dots, which emit in the violet-blue regime. We characterize moiré lattices of varying sizes, and photoluminescent spectra reveal evidence of moiré-induced flat-band modes, indicating a path toward a new kind of highly efficient, GaN-based nano-laser.
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Alexander Raun, Haoning Tang, Xueqi Ni, Eric Mazur, and Evelyn L. Hu "Gallium Nitride-based moiré photonic crystals for applications in low-threshold nano-lasers", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2648353
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KEYWORDS
Photonic crystals
Gallium
Gallium nitride
Indium gallium nitride
Laser crystals
Quantum dots
Quantum wells
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