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21 March 2023 Properties of implanted InGaN micro-LEDs with tunnel junctions
Julia Slawinska, Greg Muziol, Mikolaj Zak, Anna Kafar, Czeslaw Skierbiszewski
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2650014
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
The innovative method of μLEDs fabrication is presented. The light emission area was defined by a size of the tunnel junction (TJ) embedded inside diode. The epitaxial structures were grown entirely by plasma assisted molecular beam epitaxy (PAMBE) on (0001) bulk GaN crystals. The PAMBE grown LED structure emitting light at 450 nm was capped with TJ region and 100 nm n-type GaN. The emission size of μLEDs was defined by ion implantation of n-type GaN and TJ region. The entire surface of the wafer is atomically flat, ready for the next epitaxial process, which is important e.g. for TJ µLEDs red-green-blue displays with a stack of 3 µLEDs.
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Julia Slawinska, Greg Muziol, Mikolaj Zak, Anna Kafar, and Czeslaw Skierbiszewski "Properties of implanted InGaN micro-LEDs with tunnel junctions", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2650014
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KEYWORDS
Light emitting diodes
Indium gallium nitride
Quantum wells
Gallium nitride
Ion implantation
Ions
Laser crystals
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