Samuel Prescott,1 Prasad P. Iyer,2 Hyunseung Junghttps://orcid.org/0000-0002-3925-3238,2 Ting Shan Luk,2 Jacob Henshaw,2 Andrew Mounce,2 Sadhvikas J. Addamane,2 Igal Brener,2 Oleg Mitrofanov1,2
1Univ. College London (United Kingdom) 2Sandia National Labs. (United States)
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Placing a GaAs quantum dot (QD) within a Mie metasurface permits fine tailoring of the dot emission properties. We aligned the electric and magnetic dipole modes with the QD's emission wavelength to enhance the emission in comparison to an unstructured layer. This enhancement is analyzed using numerical simulations of modes supported by the metasurface and the effects QD position and polarization. We will discuss the comparison between the numerical results and experimental photoluminescence measurements.
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Samuel Prescott, Prasad P. Iyer, Hyunseung Jung, Ting Shan Luk, Jacob Henshaw, Andrew Mounce, Sadhvikas J. Addamane, Igal Brener, Oleg Mitrofanov, "Enhancing semiconductor quantum dot emission with electric and magnetic dipole modes in Mie metasurfaces," Proc. SPIE PC12646, Metamaterials, Metadevices, and Metasystems 2023, PC1264615 (4 October 2023); https://doi.org/10.1117/12.2677377