In this contribution, we use spectrally resolved and quantitative photoluminescence measurements to parse voltage losses in CdSeTe films and finished devices. We show that sub-bandgap features, in part due to arsenic doping, are responsible for a significant decrease in the thermodynamic voltage limit Voc,ideal. Nevertheless, thanks to excellent material quality and interface passivation, the internal voltage iVoc (i.e., quasi-Fermi-level splitting with QFLS=q×iVoc) of finished devices approaches 1000 mV, in agreement with the high minority-carrier lifetimes measured. The selectivity of the device, and in particular of the back hole contact, is thus the main limitation in these devices.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.