The problem of process monitoring is one of the most critical aspects of control in laser material processing. Chromatic sensors, which are characterized by high resolution, relatively large measurement range and good repeatability, may be used for measuring and adjusting the distance between laser head and the substrate. In this paper we propose a new solution of chromatic sensor integrated with optical laser head via an available standard monitoring port.
Optical components of laser heads are fabricated from materials characterized by high Abbe number (low range of longitudinal chromatic aberration). Therefore, for sensors application, the resulting chromatic aberration of the overall optical system should be enhanced by implementation the sets of lens described by a low value of Abbe. The numerical analysis were carried out in order to design an optical system of proposed solution, which will be described by wide measurement range, low attenuation and narrow characteristic spectral peak. The results obtained by WinLens software solutions were presented. The numerical tool whose principle of operation is based on geometric optics equations, was chosen for rapid prototyping because of its simplicity in implementation of optical components. The results from the numerical analysis were afterwards confirmed by the experiment on real optical system.
The work presents the results of a research carried out with Plasmalab Plus 100 system, manufactured by Oxford
Instruments Company. The system was configured for deposition of diamond-like carbon films by ICP PECVD method.
The deposition processes were carried out in CH4 or CH4/H2 atmosphere and the state of the plasma was investigated by
the OES method. The RF plasma was capacitively coupled by 13.56 MHz generator with supporting ICP generator
(13.56 Mhz). The deposition processes were conducted in constant value of RF generator’s power and resultant value of
the DC Bias. The power values of RF generator was set at 70 W and the power values of ICP generator was set at 300
W. In this work we focus on the influence of DLC film’s thickness on optical, electrical and structural properties of the
deposited DLC films. The quality of deposited DLC layers was examined by the Raman spectroscopy, AFM microscopy
and spectroscopic ellipsometry. In the investigated DLC films the calculated sp3 content was ranging from 60 % to 70 %.
The films were characterized by the refractive index ranging from 2.03 to 2.1 and extinction coefficient ranging from
0.09 to 0.12.
Photonic quasi-crystal structures have been prepared and investigated. Symmetrical patterns were fabricated by
interference lithography in negative tone photoresist and transferred to silicon by reactive ion etching. Theoretical
influences of pattern detail (radius of hole) on the photonic band gap have been studied. Three types of 2D photonic
quasi-crystals have been prepared: 8-fold, 10-fold and 12-fold pattern. Finally, finite-difference time-domain method was
used for theoretically prediction of transmission spectrum for fabricated 12-fold quasi-crystal.
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