Prof. Albina Nikolaeva Profile

Prof. Albina Nikolaeva

at Institutul de Inginerie Electronica si Nanotehnologii “D. Ghitu”

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Publications (2)

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Proceedings Article | 2 March 2023 Paper

Surface States and Size Effects in Semiconductor Wires of Bi1–xSbx Topological Insulators

A. Nikolaeva, L. Konopko, T. Huber, I. Popov, G. Para

Proceedings Volume 12493, 124931F (2023) https://doi.org/10.1117/12.2643275

KEYWORDS: Bismuth, Antimony, Semiconductors, Magnetism, Resistance, Dielectrics, Crystals

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We have reported the experimental observation size effects and surface state on semiconductor Bi_1-xSb_x wires with different diameters and alloy composition. The studied glass-insulated single-crystal wires of Bi_1–xSb_x semiconductor alloys were prepared by liquid-phase casting in accordance with the Ulitovsky method. The wires of all the studied compositions and diameters had the same orientation as that in the pure bismuth wires (1011 along the wire axis). A comprehensive study of the temperature dependences of resistance at T = 1.5–300 K, longitudinal and transverse magnetoresistance and their angular dependences, and SdH oscillations in magnetic fields up to 14 T as a function of wire diameter has been conducted. It has been found that the manifestation of the quantum size effect in TI wires based on semiconductor Bi_1–xSb_x alloys near the gapless state leads to an increase in the energy gap by a factor of 4 at wire diameters of 180 nm, and the SdH oscillation periods at H//C₁, C₂, and C₃ quantitatively differ from values for bulk samples of the respective composition. The longitudinal magnetoresistance (Н//I) has a maximum that linearly depends on wire diameter d, H_max = p_F c /ed. In the Bi–8at%Sb and Bi–17at%Sb, the Fermi momentum component p_F perpendicular to the magnetic induction vector H exceeds the values for pure Bi by a factor of 2 and 5, respectively. The results are discussed in terms of the manifestation of the quantum size effect and the specific features of TIs in low-dimensional structures that require new approaches and applications.

Proceedings Article | 2 March 2023 Paper

Quantum interference and surface states transport in Bi and Bi0.83Sb0.17 nanowires

L. Konopko, A. Nikolaeva, T. Huber

Proceedings Volume 12493, 124931D (2023) https://doi.org/10.1117/12.2643011

KEYWORDS: Nanowires, Bismuth, Magnetism, Antimony, Resistance, Glasses, Semiconductors, Scanning electron microscopy, Quantum electronics, Phase shifts

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Here, we report on a study of the magnetoresistance (MR) of small-diameter individual Bi and Bi_0.83Sb_0.17 nanowires down to 1.5 K and for magnetic fields up to 14 T. Glass-coated single-crystal microwires were fabricated by the Ulitovsky method. The thin nanowires samples, d<100 nm, that were investigated displayed pronounced h/e and h/2e resistance oscillations (Aharonov-Bohm (AB) oscillations) as a function of magnetic flux. The observation of these periods is consistent with considering Bi and Bi-Sb nanowires as a tube of surface states. The most intriguing is the presence of MR oscillations equidistant in the magnetic field when the magnetic field is perpendicular to the nanowires axis, when the magnetic flux through the nanowire cross section is zero. In 45-nm Bi nanowires, the self-organization of helical edge states of Bi bilayers led to the formation of series-connected stacks of bilayers, each of which had a closed conducting loop in a transverse magnetic field which results in the appearance of AB oscillations. Apparently, a similar interpretation can be applied to Bi_0.83Sb_0.17 nanowires.

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