The need for new electronic devices and applications is driving the use of transition metal dichalcogenides (TMDCs) as suitable materials to integrate the next generation of novel applications. Thickness control of semiconductors is the great importance to attain specific electrochemical properties. In this work we investigate the thickness fluctuation of 2D MoSe2 structures synthesized by pulsed laser ablation in liquids (PLAL) by changing the choice of liquid phase. For the characterization we used atomic absorption spectrometer, high resolution electron microscopy, Raman spectroscopy and photoluminescence spectroscopy. Thinner MoSe2 nanosheets resulted from PLAL synthesis in reline compared with those produced in water.
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