This study proposes the use of a ZnO-nanowire (ZnO-NW)-based heterojunction structure for applications of nano
optoelectronic sensors and photovoltaic devices. Nano heterojunctions (NHJs) were formed via e-beam deposition of ptype
nickel oxide (NiO) onto the vertical-aligned ZnO-NWs grown by hydro-thermal growth method. The dark J-V curve
shows that the prepared NiO/ZnO-NWs NHJ has a diode-like behavior with a forward threshold voltage (Vth) of 1.2 V
and a leakage current (Jr at -1V) of 0.02 μA/cm2, respectively. It also exhibits a superior response to UV (366 nm) and
AM 1.5G light illuminations. The Vth and the photocurrents (i.e., Jr at -1V) under UV (366 nm @ 6 mW/cm2) and AM
1.5G light were 0.7 V/0.06 μA/cm2 and 0.5 V/ 3.2 μA/cm2, respectively, revealing an increase in the diode current of
about 3× and 160×, respectively.
In this study, well-ordered and vertically-aligned metal (nickel (Ni)/zinc (Zn)) and metal oxides (NiO/ZnO) nano
heterojunctions (NHJs) were grown inside the nanopores of anodic aluminum oxide template (AAOT) using electrochemical
deposition (ECD) and thermal oxidization. The prepared NHJs are with a controllable length and diameter. The
electrical properties of NiO/ZnO NHJs show a rectifying behavior of a p-n junction, while the Ni/Zn NHJs show an
ohmic behavior. The optoelectronic characteristics demonstrate that the NiO/ZnO NHJs have fairly good sensitivity and
response to the ultraviolet (UV) light (366 nm) with decrease in Vth by about 75% and an increase in Jr by about 80% @
6 mW/cm2. The low dimension of NHJs shows profound quantum confinement effect, which would be potential
applications on nano integrated photonics, such as photodetectors, optical sensors and biosensors.
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