KEYWORDS: Epitaxy, High power lasers, Reliability, Laser development, Metalorganic chemical vapor deposition, Laser applications, Yield improvement, Manufacturing, Laser systems engineering
Industrial quality high power laser bars operated at 250 W output power are in volume production. Beyond the output power high conversion efficiency, polarization purity and beam quality are key requirements in high power applications. The latter requires controlling the chip beam parameter, especially the slow axis blooming, as well as the flatness or “smile” of the packaged device. The chip and package endurance must be carefully considered in the design. Our new MOCVD-based high power laser platform enables power conversion efficiencies of above 65% over the entire 920 nm to 1080 nm wavelength range at 250 W output power and at drive currents ranging from 250 to 285 A. Endurance test results show the high reliability of the chip and the fully AuSn hard soldered micro channel cooler package. Random emitter failures are the single relevant degradation mechanism present. At normal operating condition a degradation rate as low as 0.2% in 1000 h operation, obtained in 13’000 h test time indicates a MTTF of 100,000 h. Results of the QCW life-tests are in agreement with the CW tests and confirm the robustness of the fully AuSn hard soldered assembly. Also the micro channel cooler shows no sign of degradation from corrosion. The established 250 W MOCVD-epitaxy based platform is now paving the way to 300 W and later 350 W output power. Devices with 420W peak power and rollover currents of 550 A at 1040 nm wavelength were demonstrated.
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