Distributed quantum processing over local optical networks is a route to fault-tolerant quantum computing at scale and practical quantum advantage. The performance of modular, networked quantum technologies will, however, be contingent upon the quality of their light-matter interconnects. Silicon colour centres offer optically-coupled spin qubit registers as the basis for quantum networks and distributed quantum computing. Silicon is an ideal platform for commercial quantum technologies: it unites advanced photonics and the microelectronics industry, as well as hosting long-lived spin qubits. The silicon T centre was recently discovered to combine direct telecommunications-band photonic emission, long-coherence electron and nuclear spins [1,2], and proven integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips at scale. In this talk I present recent advances networking T centres with nanophotonics. We enhance the optical emission rate by an order of magnitude with integrated nanocavities to create coherent optical interfaces. We determine the T centre’s hyperfine spin qubit coupling and introduce schemes for operating each T centre as a deterministic four-qubit spin register. T centre devices producing spin-entangled photons can make immediate use of integrated silicon photonic networks boasting low-loss active components, efficient coupling to standard telecommunications fibres, and efficient on-chip photon detectors. These elements may be assembled to create an on-chip spin-photon quantum processor that interfaces with optical fibres for long-range communication over the quantum internet.
T centers in silicon could serve as efficient quantum memories based on spin-photon interface. But these emitters have long excited state lifetimes and are therefore dim. We demonstrate high-efficiency single photon emission from the zero-phonon line of a single T center using a nanobeam. The tapered nanobeam features coupling efficiency of 71% into a lensed fiber, enabling an order of magnitude improvement in photon count rates as compared to previously reported values. Consequently, we demonstrate single photon emission from the zero-phonon line, representing the coherent emission from the T center. Our result is an important step towards CMOS-integrated spin-photon interfaces.
D. Higginbottom, A. DeAbreu, C. Bowness, A. Alizadeh, C. Chartrand, N. Brunelle, E. MacQuarrie, N. Lee-Hone, M. Ruether, M. Kazemi, A. T. Kurkjian, M. L. Thewalt, S. Simmons
The performance of modular, networked quantum technologies will be contingent upon the quality of their light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking and distributed quantum computing. These newly rediscovered silicon defects offer direct telecommunications-band photonic emission, long-lived electron and nuclear spins, and proven integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips at scale. Here we present recent advances with T centre devices towards high-performance, large-scale distributed quantum technologies based upon T centres in silicon.
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