P. J. van Zwol, M. Nasalevich, W. P. Voorthuijzen, E. Kurganova, A. Notenboom, D. Vles, M. Peter, W. Symens, A. J. M. Giesbers, J. H. Klootwijk, R. W. E. van de Kruijs, W. J. van der Zande
EUV pellicles are needed to support EUV lithography in high volume manufacturing. We demonstrate progress in cap layer design for increased EUV transmission and infrared emission of the Polysilicon-film. In our research lab we obtained EUV transmission of 90% and good emissivity for a fully capped pSi film. We also discuss results on next generation EUV pellicle films. These include metal-silicides and graphite. Next-gen film performance is compared to the current generation pSi film. These films are expected to be stable at higher operating temperature than pSi. Metal-silicides have the advantage of sharing a similar process flow as that of pSi, while graphite shows ultimate high temperature performance at the expense of a more complicated manufacturing flow. Capping layers are needed here as well and capping strategies are discussed for these film generations.
In order to deploy EUV lithography as a high volume manufacturing technology an extreme control of reticle defectivity is required. Systematic defect printing is unaffordable. A potential solution being investigated for meeting the EUV reticle contamination control requirements is to utilize a suspended thin membrane (pellicle) mounted at a fixed distance in front of the reticle as a physical barrier against particles. Pellicles of the aspect ratios relevant for the scanner (~11x14 cm2, ~50 nm) that are based on polycrystalline silicon were produced and successful imaging runs were carried out. Investigations of pellicles using different materials continue to ensure having membranes capable of withstanding future high EUV source powers and to ensure larger EUV transmission values. The ideal requirements of the pellicle are: (i) maximum EUV transmission ideally above 90% single pass, (ii) chemical stability and (iii) thermo-mechanical resistance under EUV/H2. Since fulfilling all the requirements in one single layer is a challenge, different layer film architectures are proposed. This paper discusses such architectures, both silicon- and carbon-based. The base materials are complemented by nanometre thin coatings that increase IR absorption and thus enhance emissivity and that prevents oxidation of the base material occurring in high power EUV systems.
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