Prof. David Westerfeld Profile

Prof. David Westerfeld

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Publications (5)

Proceedings Article | 3 May 2016 Paper

Development of a high-definition IR LED scene projector

Dennis Norton, Joe LaVeigne, Greg Franks, Steve McHugh, Tony Vengel, Jim Oleson, Michael MacDougal, David Westerfeld

Proceedings Volume 9820, 98200X (2016) https://doi.org/10.1117/12.2225852

KEYWORDS: Staring arrays, Light emitting diodes, Infrared radiation, Projection systems, Mid-IR, Infrared radiation, Light emitting diodes, Staring arrays, Systems modeling, Data modeling, Infrared imaging, Imaging infrared seeker, Thermal modeling

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Proceedings Article | 4 May 2010 Paper

Type-I GaSb based diode lasers operating at room temperature in 2 to 3.5 µm spectral region

J. Chen, T. Hosoda, G. Tsvid, R. Liang, D. Westerfeld, G. Kipshidze, L. Shterengas, G. Belenky

Proceedings Volume 7686, 76860S (2010) https://doi.org/10.1117/12.852208

KEYWORDS: Waveguides, Semiconductor lasers, Continuous wave operation, Gallium antimonide, Indium, Quantum wells, Cladding, Aluminum, Optical fibers

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Proceedings Article | 12 February 2008 Paper

Interband GaSb-based laser diodes for spectral regions of 2.3-2.4 µm and 3-3.1 µm with improved room-temperature performance

Gregory Belenky, Dimitri Donetski, Leon Shterengas, Takashi Hosoda, Jianfeng Chen, Gela Kipshidze, Michail Kisin, David Westerfeld

Proceedings Volume 6900, 690004 (2008) https://doi.org/10.1117/12.754713

KEYWORDS: Waveguides, Semiconductor lasers, Quantum wells, Heterojunctions, Laser development, Aluminum, Indium gallium arsenide antimonide, Continuous wave operation, Gallium antimonide

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Proceedings Article | 13 September 2005 Paper

1.5 and 2.3 µm diode laser arrays for optical pumping

A. Gourevitch, G. Belenky, L. Shterengas, D. Donetsky, D. Westerfeld, B. Laikhtman, R. Martinelli, G. Kim

Proceedings Volume 5887, 588711 (2005) https://doi.org/10.1117/12.620001

KEYWORDS: Temperature metrology, Semiconductor lasers, Laser development, Pulsed laser operation, High power lasers, Continuous wave operation, Resistance, Erbium, Erbium lasers, Optical pumping

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High wall-plug efficiency and a wide range of available wavelengths make laser diode arrays preferable for many high-power applications, including optical pumping of solid state lasers. Recently, we designed and fabricated InGaAsP/InP arrays operating at 1.5-μm and In(Al)GaAsSb/GaSb arrays operating at 2.3-μm. We have demonstrated a high continuous-wave (CW) output power of 25 W from a one dimensional laser array and a quasi-CW (q-CW) output power of 110 W from a two dimensional laser array both operating near 1.5-μm. We have obtained a CW output power of 10 W from the 2.3-μm laser array. The 1.5-μm arrays are suitable for resonant pumping of erbium doped solid-state lasers, which require high power optical sources emitting in the narrow erbium absorption bands. Long current-injection pulses produce a considerable temperature increase within the diode laser structure which induces a red-shift of the output wavelength. This thermal drift of the laser array emission spectrum can lead to misalignment with the erbium absorption bands, which decreases pumping efficiency. We have developed an experimental technique to measure the time dependence of the laser emission spectrum during a single current pulse. From the red-shift of the laser emission, we determine the temperature of the laser active region as a function of time. The spacing between the individual laser emitters has an effect on the array heating. In steady state operation, this spacing is a contributing factor in the non-uniformity of the thermal field within the bar, and thus to the overall thermal resistance of the laser bar. Under pulse operation, the transient heating process can be divided into three time periods; each with its own heat transport condition. It was shown that in the initial period of time the heat propagates within the laser bar structure and the laser bar design (fill factor) strongly affects the active region temperature rise. In the later periods the temperature kinetics is insensitive to the fill factor. This analysis has been verified in experimental studies using the 1.5-μm laser arrays.

Proceedings Article | 22 May 2002 Paper

Optical gain and loss in 3-um diode W lasers

Sergei Suchalkin, David Westerfeld, Dimitrii Donetski, Ramon Martinelli, Igor Vurgaftman, Jerry Meyer, Serge Luryi, Gregory Belenky

Proceedings Volume 4651, (2002) https://doi.org/10.1117/12.467946

KEYWORDS: Semiconductor lasers, Diodes, Temperature metrology, Mid-IR, Continuous wave operation, Laser optics, Optical pumping, Cladding, Active optics, Electrons

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