We study electrical properties of ZnO thin films on p-Si (100) substrates as ultraviolet (UV) photodetector. ZnO films with thickness of ~400nm were deposited by room temperature (RT) DC unbalanced magnetron sputtering (DC-UBMS), and we also used ZnO film deposited at 260°C for the comparison. Metal-semiconductor-metal (MSM) planar structure was fabricated by using silver (Ag) contact on ZnO thin films as photodetector. X-ray diffraction (XRD) spectroscopy shows the amorphous structure of RT growth of ZnO thin films in contrast to relatively good crystallinity of ZnO film grown at 260°C. I-V characteristics of reverse-forward bias of UV photodetector were taken in dark and light conditions. As the results, amorphous phase of RT ZnO shows the high value of dark current and photocurrent. High stability of photo detection is also observable over the specific time as investigated by switching condition. In addition, we found that the mechanism of photo detection is strongly related to the oxygen adsorption on the ZnO surface. This study provides an alternative way to have a simple and high sensitive UV photodetector.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.