Crystalline sesquioxide films (Sc2O3, Y2O3, Lu2O3) produced by pulsed-laser deposition were examined for laser damage resistance with pulses of 500 fs duration, at a wavelength of 1030 nm and at a 10 Hz repetition rate. Comparable tests were performed with amorphous magnetron-sputtered thin films (SiO2, HfO2, Nb2O5). We found the laser-induced damage thresholds of the sesquioxides are close to those of HfO2 in the multi-pulse test regime. The results are the basis for designs of damage resistant re ective components used in ultrashort-pulse lasers.
Dielectric sesquioxide films (Sc2O3, Y2O3, and Lu2O3) were fabricated by pulsed-laser deposition and tested in terms of their laser damage properties for pulses of 500 fs duration, at a wavelength of 1030 nm and at a 10 Hz repetition rate. Comparable tests were performed with magnetron-sputtered thin films of established optical-coating materials (SiO2, HfO2, and Nb2O5), whose results served as a benchmark. The laser-induced damage thresholds of the sesquioxides are comparable to each other, and in the multi-pulse test regime show values close to ones of HfO2 coatings. A lower damage threshold was observed for the polycrystalline Lu2O3 film grown on sapphire compared to single-crystal Lu2O3 grown on yttrium aluminium garnet (Y3Al5O12), attributed to the highly textured morphology and potential for a greater density of defect states in these films. We conclude that pulsed-laser deposition is a potential fabrication method of sesquioxides for use in high-power resistant optical components for ultrashort-pulse lasers.
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