Dr. Grant Z. Pan Profile

Dr. Grant Z. Pan

at Univ of California Los Angeles

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Proceedings Article | 13 February 2008 Paper

Investigation of process parameters towards high efficiency silicon light-emitting diodes

Grant Pan, Dae Pak, Jaime Peretzman, Li Ren

Proceedings Volume 6910, 691015 (2008) https://doi.org/10.1117/12.763787

KEYWORDS: Silicon, Light emitting diodes, Device simulation, Boron, Aluminum, Quantum dot light emitting diodes, Computer simulations, Diodes, Electron holes, Quantum efficiency

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Four B-implanted p-n junction silicon light-emitting diodes were designed and simulated under identical fabrication process and recombination mechanisms by using Silvaco simulators. In the simulations, the implant energy and dose and the post-implant anneal temperature were varied to compare the designs in terms of band-to-band radiative recombination rates and locations. It was found that a pillar design wrapped with p-n junction has the greatest radiative recombination rate. Regardless of the designs, the radiative recombination rate is always higher in the B-implanted p⁺ region than in the n^- substrate. When the implant energy and dose are kept constant, there exists a peak in maximum radiative recombination rate when the anneal temperature increases from 700 to 1100 °C, and the temperature at peak increases while the implant dose increases. When the anneal temperature is kept constant, the radiative recombination rate always increases with implant dose but saturates at a dose when maximum solubility of dopants is reached at the temperature; however, the radiative recombination rate does not change significantly with implant energy. It was found that the effects of implant parameters and anneal conditions on BB radiative recombination rate could be correlated with active dopant concentration. In order to achieve high-efficiency silicon p-n junction diodes, implant parameters and anneal conditions must be optimized to maximize the active dopant concentration in the p⁺ region along with the spatial confinement of extended defects.

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