Dr. Grzegorz Cywinski
at Institute of High Pressure Physics
SPIE Involvement:
Author
Publications (5)

Proceedings Article | 3 October 2022 Presentation
Maciej Sakowicz, Maksym Dub, Pavlo Sai, Dmitro But, Grzegorz Cywinski, Justinas Jorudas, Artur Šimukovic, Pawel Prystawko, Simonas Indrišiunas, Vitalij Kovalevskij, Sergey Rumyantsev, Irmantas Kašalynas, Wojciech Knap
Proceedings Volume 12230, 1223003 (2022) https://doi.org/10.1117/12.2632980
KEYWORDS: Field effect transistors, Plasma, Terahertz radiation, Transistors, Gallium nitride, Fin field effect transistors, Silicon carbide, Temperature metrology, Resonators, Plasma generation

Proceedings Article | 5 March 2021 Presentation + Paper
M. Sakowicz, P. Sai, D. But, G. Cywinski, M. Dub, I. Kašalynas, P. Prystawko, S. Rumyantsev, W. Knap
Proceedings Volume 11685, 116850C (2021) https://doi.org/10.1117/12.2576870
KEYWORDS: Plasma, Field effect transistors, Terahertz radiation, Heterojunctions, Fin field effect transistors, Transistors, Terahertz detection, Gallium nitride, Temperature metrology

Proceedings Article | 2 March 2020 Paper
Proceedings Volume 11279, 1127905 (2020) https://doi.org/10.1117/12.2547298
KEYWORDS: Field effect transistors, Plasma, Terahertz radiation, Sensors, Gallium nitride, Terahertz detection

Proceedings Article | 17 February 2011 Paper
P. Perlin, K. Holc, M. Sarzynski, M. Leszczynski, R. Czernecki, L. Marona, P. Wisniewski, G. Cywinski, C. Skierbiszewski, M. Bockowski, I. Grzegory, T. Suski
Proceedings Volume 7953, 79530I (2011) https://doi.org/10.1117/12.873929
KEYWORDS: Cladding, Semiconductor lasers, Gallium nitride, Plasmonics, Refractive index, Indium gallium nitride, Nitrogen, Waveguides, Plasma, Molecular beam epitaxy

Proceedings Article | 3 March 2006 Paper
C. Skierbiszewski, G. Cywiński, M. Siekacz, A. Feduniewicz-Zmuda, L. Nevou, L. Doyennette, M. Tchernycheva, F. Julien, J. Smalc, P. Prystawko, M. Kryśko, S. Grzanka, I. Grzegory, J. Domagała, T. Remmele, M. Albrecht, S. Porowski
Proceedings Volume 6121, 612109 (2006) https://doi.org/10.1117/12.646014
KEYWORDS: Aluminum, Quantum wells, Gallium nitride, Absorption, Indium, Telecommunications, Polishing, Plasma, Molecular beam epitaxy, Superlattices

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