This article reports the preparation and research of poly(3-hexylthiophene) (P3HT)/[6,6]-phenyl C61-butyric acid methyl ester (PC61BM)/Zinc oxide (ZnO) UV-visible dual-band photodetectors (PDs). At room temperature, ZnO, PC61BM and P3HT films were deposited on the FTO substrate using radio frequency magnetron sputtering technology and sol-gel technology respectively. A selective planar heterojunction organic photodetector was prepared using p-type polymer P3HT and n-type fullerene acceptor PC61BM as double active layers. Controlling phase separation in a binary complex system of donor and acceptor to improve hole extraction efficiency. This heterojunction has good UV-visible detection capabilities. Under a 2 V bias condition, the PD has a UV-visible dual-band response, with a peak at 380 nm of 0.072 A/W, and high wavelength selectivity. This demonstrates a facile method to prepare an organic-inorganic composite photodetector with high performance.
Flexible zinc oxide (ZnO) photodetectors have attracted widespread attention due to their advantages such as light weight, good flexibility, good photoelectric performance, and flexible preparation processes. This study successfully prepared high-quality ZnO thin films on polyethylene terephthalate (PET) flexible substrates using magnetron sputtering method, and completed the preparation of photodetectors by evaporating silver electrodes on the surface of the thin films. Afterwards, we tested and characterized the photoelectric performance of the prepared detector, and the results showed that the detector has good photoresponse characteristics and stable photocurrent output. The preparation of this detector on a flexible substrate provides strong support for its applications in wearable electronics, flexible displays, and other fields. This study provides valuable insights for the future development and utilization of flexible ZnO photodetectors.
With the rise of detection technology, ultraviolet detection has received attention in civilian, military and other fields, which has aroused great research interest. ZnO has great development prospects in the field of ultraviolet photodetectors due to its excellent physical, optical, and electrical properties. This article uses magnetron sputtering method to sputter high-quality ZnO thin films on inexpensive glass substrates. The morphology, crystal phase, and optical absorption of ZnO thin films were characterized by SEM, XRD, and UV/Visspectrophotometer. Metal-semiconductor-metal (MSM) structure Ti/ZnO ultraviolet photodetectors were prepared by vacuum evaporation. The effect of the number of interdigital electrodes on the performance of the photodetector was investigated by responsivity and I-V characteristic curves. The results show that the ZnO thin films prepared by magnetron sputtering are uniform and dense, have obvious ultraviolet absorption, and the performance of the photodetector is strongly dependent on the number of interdigital electrodes. When the working voltage is 10 V, the spectral response of the five pairs of interdigital electrodes is significantly enhanced (0.467 A/W). Therefore, this article provides certain reference values for the preparation and application of high-performance ZnO ultraviolet photodetectors.
This study aims to investigate the effect of electrode spacing on the performance of amorphous gallium oxide photodetectors. Firstly, we prepared a series of amorphous gallium oxide photodetector samples with electrode spacings of 80 µm, 100 µm, and 120 µm. Then, we tested the photoelectric performance of these samples. We found that the electrode spacing has a significant effect on the responsivity of the photodetectors. Due to the reduction of the carrier transmission distance, smaller electrode spacing can effectively improve the responsivity of the a-Ga2O3 photodetector, which reaches 0.096 A/W under 30 V, 255 nm illumination. This study provides a reference for the optimal design of the electrodes of amorphous Ga2O3 photodetectors.
The combination of inorganic semiconductor and organic lead halide perovskite to prepare photodetectors can produce wider spectral response and better photoelectric performance to a certain extent, so it has been widely studied. Here, ZnO thin film was prepared by radio frequency magnetron sputtering, MAPbI3 was prepared by spin coating method, and ZnO/MAPbI3 composite UV-vis photodetector was prepared. ZnO is n-type semiconductor material, MAPbI3 is p-type semiconductor material and ZnO/MAPbI3 heterojunction is formed at the contact interface. Electrons from MAPbI3 diffuse into ZnO and holes from ZnO diffuse into MAPbI3, forming a built-in electric field. The surface of ZnO reacted photodesorption, the width of the depletion zone is reduced, leading to an increase in free carriers. With an operating voltage bias of 3 V, the ZnO/MAPbI3 photodetector represented significantly enhanced spectral reactivity (0.02 A/W). Therefore, our study will provide a reference for combining inorganic substances and perovskite to be used in high-performance photodetectors.
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