The development of AIIIBV photodetectors with subpicosecond response time seems to be one of core problems in modern optoelectronics. Its solution is required, in particular, for the implementation of high-speed and high-level optical interconnections in ultra-large-scale integrated circuits. Previously, we proposed the concept of a photodetector with controlled relocation of carrier density peaks whose structure allows for mobility and lifetime modulation and, as a result, reduction of back-edge photocurrent lag in photosensitive p-i-n heterojunction. In this paper, we perform the analysis of electron and hole transport in the aforementioned sensor using a time-domain drift-diffusion semiclassical model. Numerical solution of the system that contains the two-dimensional continuity and Poisson equations allows us to evaluate key characteristics of the photodetector with controlled relocation and to modify its structure and photoreceiver circuit reasonably.
This paper is aimed at the research and development of high-speed AIIIBV photodetectors for on-chip optical interconnections in integrated circuits. We treat the problem of the quasi-hydrodynamic numerical simulation of photosensitive semiconductor devices. The results of GaAs p-i-n photodiode simulation obtained with the use of the simplified model are discussed.
In this paper, we consider the issue of research and development of on-chip optoelectronic devices designed for the optical interconnecting of integrated circuit elements. We address the conceptual on-chip optical interconnections based on AIIIBV nanoheterostructure lasers with functionally integrated modulators of optical radiation. According to the estimations, these optoelectronic devices can generate subpicosecond optical pulses. The paper is aimed at the development of numerical models, simulation methods, and specialized software. These aids are intended for the research of physical processes taking place in high-speed heterostructure photodetectors suitable for operation as parts of on-chip optical interconnections together with the lasers-modulators. We propose to utilize the drift-diffusion approximation of the semiclassical approach for the numerical simulation of charge carrier transport and accumulation in semiconductor photosensitive heterostructures. The drift-diffusion numerical simulation technique was developed. This technique is based on the application of the Newton method, implicit difference scheme, and Slotboom drift-diffusion formulation in terms of electron and hole imref exponents and electrostatic potential. We researched p+-Al0.3Ga0.7As/i-GaAs/n+-Al0.3Ga0.7As and metal/n-Al0.3Ga0.7As/n+-GaAs heterostructures. Rise and fall times of the devices being considered are approximately equal and amount to about 1.6 ps for the p-i-n structure and 1.7 ps for the Schottky-barrier photodiode. We concluded that it is reasonable to develop the methods directed at the improvement of photodetector response speed.
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