Mr. Jihwan Choi Profile

Jihwan Choi

at SK hynix system ic Inc

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 23 October 2015 Paper

Investigation of scum type growing defects on attenuated PSM and its prevention

Jihwan Choi, Yongho Kim, Dongwook Lee, Hoyong Jung, Snagpyo Kim, Donggyu Yim

Proceedings Volume 9635, 96351O (2015) https://doi.org/10.1117/12.2196069

KEYWORDS: Air contamination, Chromium, Photomasks, Critical dimension metrology, Semiconducting wafers, Oxides, Deep ultraviolet, Transmittance, Scanners, Phase shifts

Read Abstract +

The abnormal growing defect (we called this defect 'scum haze defect') in the photomask which is generated during the wafer lithography process is very important issue on semiconductor industry. Because wafer yield loss could be caused by the mask CD variation and the transmittance loss due to the growing defects on the photomask, many studies have been done about the mechanism and the solution of the general type growing defects such as haze and Cr migration so far, However we still need to clarify some abnormal types of the growing defects such as scum haze defect. In this paper, we investigated the generation mechanism and prevention techniques of the scum haze defect on the attenuated phase shift mask. This defect composed of CrOx is caused by the increase of the accumulated exposure energy on photomask. This phenomenon is remarkably similar to the Cr migration on binary mask. But, the apparent difference is that this scum type defect is observed on the attenuated phase shift mask which mainly consists of MoSiON film, and it is difficult to control this defect because of its irregular generation characteristic. Additionally, this defect is not generally removed through the conventional wet cleaning process but it only could be removed by a kind of plasma treatment. In this study, the difference of generation mechanism between the scum haze defect and the general haze was discussed, and the optimal process for controlling scum haze defect in the mask manufacturing was described.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years