Variable temperature Hall measurements are extremely important when investigating the electronic transport properties of materials. Materials of interest for solar cell applications are typically characterized by very small charge carrier mobilities that are difficult, if not impossible to measure using traditional DC field techniques1-3. For these materials special techniques like AC field Hall are required to reliably measure the small Hall voltages and low mobilities.
The Hall effect is a primary method to measure carrier density, mobility and carrier type in semiconducting materials.
Many contemporary semiconductor and electronic materials being developed for green energy, efficient lighting, flexible
inexpensive electronics and high power devices are characterized by very low mobilities1,2,3. For a traditional DC field
Hall system, mobilities of less than 10 cm2/(Vs) become very difficult to measure with magnetic fields on the order of
1 T. This paper examines an AC field Hall measurement methodology that allows one to measure Hall mobilities down
to 0.001 cm2/(Vs)-lower than possible using traditional DC field Hall measurement techniques. The first section of this
paper is a review of the DC method, followed by the introduction of the AC method. AC field measurements of
microcrystalline Si and ZnO are presented.
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