Compact, multi-spectral laser sources emitting in the mid-infrared (mid-IR) are in high demand for applications. Integration of several multi-spectral, mid IR quantum cascade lasers on silicon-based waveguide platforms is a necessary step towards realization of functional and complex mid-infrared photonic integrated circuits. This paper focuses on the thermal aspects of integration of multi-spectral QCLs toward the integration of QCL chips on silicon-based platform. The experimental results registered by means of CCD-thermo-reflectance are supported by numerical simulations of heat dissipation. The effects of thermal cross-talk between individual emitters are presented and discussed, leading to design guidelines for placement of laser chips in mid-infrared integrated photonics systems.
We report recent results of works on quantum cascade lasers at the Institute of Electron Technology. During that time we have developed technology of lasers emitting at wavelengths 9.0–9.5 μm and 4.7 μm, based on InGaAs/AlGaAs/GaAs and InAlAs/InGaAs/InP heterostructures; both lattice matched and strain compensated. The structures were grown by molecular beam epitaxy MBE and by metalorganic vapor phase epitaxy MOVPE. The InGaAs/AlGaAs/GaAs lasers were grown by MBE. For InP based lasers three types of structures were investigated; the one grown exclusively by MBE without MOVPE overgrowth, the second fabricated by hybrid approach combining MBE grown AlInAs/InGaAs active region with MOVPE grown InP top waveguide layer and the third one with both the top and the bottom InP waveguide grown by MOVPE. Regardless of the waveguide construction, the active region was grown by MBE in every case. The lasers were fabricated in double trench geometry using standard processing technology. The buried heterostructure lasers were also investigated.
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