As the third generation of photovoltaic cell technology, the Perovskite Solar Cells (PSCs) have strong theoretical advantages compared with discrystalline silicon and thin film cells because of their material characteristics. In the formation of the series structure of perovskite cells, different film layers need to be marked at different positions. The scribing of functional layers can be done by mask plate, chemical etching, mechanical or laser scribing. Laser scribing can produce finer scribing areas. At present, laser scribing has gradually replaced other scribing methods and become the main scribing methods. In this paper, laser scribing for the realization of all the P1, P2, and P3 scribes are reported by optical fiber femtosecond laser with output wavelengths of 532 nm, and pulse width is adjustable at 300 fs. The better processing parameters are found for the scribing speed of 2000 mm/s, and the laser power of 1.8 W for the P1 scribe. High precision scribing with slit width less than 10 μm is obtained by optimizing scribing speed and laser power. All the results indicate that laser scribing would play an important role in achieving high performance PSCs modules in which the interconnects.
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