We have developed an ultra compact dispersion compensator based on multiple one dimensional coupled-defect-type
photonic crystals, utilizing large optical group velocity dependence on the wavelength without polarization mode
dependence. The photonic crystal of the compensator consists of a SiO2/Ti2O5 multi-layer thin-film structure and SiO2
defect layers and was designed for a 1.55-μm, 40-Gbit/s optical communication system. The thin-film structure is
substrate-free, which enables the compensator to be small, that is, a 1.4-mm-edge cube. To obtain a large group-velocity
difference, 60 substrate-free films are stacked to form the compensator. The passband is 2 nm, and the group delay time-difference
within the band is more than 100 ps. A 40-Gbit/s non-return-to-zero optical transmission experiment was
carried out with the compensator, demonstrating dispersion-compensation operation over a 10-km standard single-mode
fiber, which corresponds to dispersion of 170 ps/nm.
In order to clarify the temperature dependence of the polariton phase change under electric field, an interferometric measurement was performed. The sample was a 400-micrometers -long polariton waveguide made of GaAs/AlGaAs layers with a p-i-n structure. A 7.5 nm GaAs single-quantum well is formed at the center of the core layer. The measured phase change at a lower temperature is about 10 times larger than that at a higher temperature, and the critical temperature is around 120 K. This critical temperature is remarkably high although the damping of the polariton usually occurs at a relatively low temperature. Such a high critical temperature indicates a possibility of a polariton device operation in a relatively high-temperature region.
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