Mr. Masayoshi Tsuzuki Profile

Masayoshi Tsuzuki

at Toppan Printing Co Ltd

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Author

Publications (5)

Proceedings Article | 28 August 2003 Paper

Improvement of critical dimension stability of chemically amplified resist by overcoat II

Teruhiko Kumada, Koji Tange, Kazuyuki Maetoko, Kunihiro Hosono, Masayoshi Tsuzuki, Kyoichi Yonetani, Reiji Terada, Yukio Nakashiba, Shingo Anzai, Yasutaka Kikuchi

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504182

KEYWORDS: Critical dimension metrology, Photomasks, Chemically amplified resists, Manufacturing, Polymers, Photoresist processing, Coating, Diffusion, Semiconducting wafers, Molecules

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Proceedings Article | 1 August 2002 Paper

Improvement of critical dimension stability of chemically amplified resist by overcoat

Teruhiko Kumada, Atsuko Sasahara, Kazuyuki Maetoko, Kunihiro Hosono, Takemichi Honma, Yuji Kodaira, Yukio Nakashiba, Masaoshi Tsuzuki, Yasutaka Kikuchi

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476955

KEYWORDS: Diffusion, Printing, Coating, Inspection, Polymers, Photoresist processing, Manufacturing, Chemically amplified resists, Photomasks, Critical dimension metrology

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Proceedings Article | 5 September 2001 Paper

Manufacturing and inspection of assist-bar-type OPC mask

Masayoshi Tsuzuki, Wataru Nozaki, Shinji Akima, Jun Yoshida, Yuko Oi, Yoshiro Yamada, Yuichi Matsuzawa

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438399

KEYWORDS: Defect detection, Scanning electron microscopy, Critical dimension metrology, Defect inspection, Semiconducting wafers, Binary data, Manufacturing, Optical proximity correction, Inspection, Photomasks

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Proceedings Article | 22 January 2001 Paper

Performance of JBX-9000MV with negative-tone resist for 130-nm reticle

Naoki Takahashi, Masayoshi Tsuzuki, Jun Kotani, Jun Yoshida, Yuji Kodaira, Yuko Oi, Yoshiro Yamada, Yuichi Matsuzawa

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410702

KEYWORDS: Electronics, Motion estimation, Product engineering, Logic, Cadmium, LCDs, Photoresist processing, Dry etching, Critical dimension metrology, Reticles

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Proceedings Article | 30 December 1999 Paper

Process optimization of e-beam lithography with high-accelerated voltage

Jun Yoshida, Noriaki Takagi, Masayoshi Tsuzuki, Naoki Takahashi, Yoshiro Yamada, Yuichi Matsuzawa

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373340

KEYWORDS: Etching, Photomasks, Lithography, Optical proximity correction, Reticles, Electron beam lithography, Critical dimension metrology, Wet etching, Photoresist processing, Dry etching

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Along with the rapid generation change of lithography and widened application of OPC, the process for High Accelerated Voltage E-Beam reticle is changing from Wet Etching to Dry Etching. Establishment and optimization of Dry Etching process becomes urgent need for mask manufacturers. However, the current resist commonly used for Dry Etching has a problem, which is resist film thickness loss on high pattern density area. Unless we can solve this problem, we can not say the Dry Etching process is suitable for next generation lithography. We selected and evaluated Chemically Amplified (CA) Resist to improve Dry Etching process of high-accelerated E-Beam. At first, as a reference of present quality, we evaluated both Dry Etching and Wet Etching process with a non-CA resist, which is commonly used. As a result advantages of Dry Etching over Wet Etching are confirmed in Linearity, pattern profile and resolution. But the problem of Dry Etching, which is pattern dependent CD variation caused by the uneven loss of resist thickness was also materialized. It is also confirmed that the amount of resist thickness loss is strongly related to pattern density. Then we did basic evaluation about several CA resists. As a result, it was confirmed that CA resist had advantages over non-CA resist on almost all aspects such as Contrast, film thickness loss and cross-sectional profile. And CA resist also solved the problem of resist thickness loss related to pattern density, which we observed when we used non-CA resist. Among several candidates, we selected one CA resist which has high contrast, vertical cross sectional profile, and enough remaining film thickness. We decided that the resist is suitable for Dry Etching optimization, then we did patterning evaluation using this resist. As a result the reticle quality was satisfactory. We could confirm big improvement on both pattern dependent CD variation and pattern profile compared to Dry Etching process using non-CA resist.

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