The luminescent and structural properties of GeOx thin films and GeO/SiO2 multilayer heterostructures, irradiated with 167 MeV Xe ions with fluencies up to 1013 cm−2 , were studied. We report strong photoluminescence in visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. And infrared luminescence bands (from ~0.8 eV to ~1.2 eV) were observed in as-deposited and irradiated structures, which can be related to defects or defects complexes in GexSiyO2 glass and partially in Si substrate. It was shown that swift heavy ion irradiation does not lead to the expected phase separation of germanium suboxide into germanium nanoclusters and GeO2, but causes the intermixing of GeO/SiO2 layers with the formation of Ge-O-Si bonds.
Detection of spin diffusion length in different materials has been launched tremendously so far. But due to the difficulty of obtaining a high-quality semiconductor (SC) layer on ferromagnetic metals, until now most of the studies of spin diffusion transport in SC were only limited on lateral structure devices. Here, by using ultra-high vacuum wafer-bonding technique, a vertical structure of CoFeB/MgO/Si/Pt is fabricated successfully and based on which, the spin diffusion transport is demonstrated at room temperature by spin pumping. With the Pt layer on top to detect the inverse spin hall voltage for different thickness of n-Si layer, the spin diffusion length is determined to be 3.8 μm, which is comparable with the value reported in lateral devices. Furthermore, our experiments reveal the existence of interface state at MgO/Si interface, which is essentially important to build the model of spin-mixing conductance for spin-pumping into Si.
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