Terminal current noise calculations are performed for a SiGe heterojunction bipolar transistor in a wide range of
collector-emitter bias conditions. The generalized hydrodynamic (HD) model with a local temperature approach
for avalanche generation is used. The parameters of the local temperature model are calibrated by matching the
avalanche multiplication factor to results obtained by full-band Monte Carlo simulations. The noise figure calculation
results are compared with experimental values and overall good agreement is obtained. The hydrodynamic
and a drift-diffusion (DD) model are used to investigate terminal current noise due to impact-ionization. The
behavior of the current noise spectral intensity is found to be different for the two models. The Fano factor of
the collector current fluctuations is well described by the avalanche multiplication factor in the case of the DD
model, whereas the HD model evidences no correlation between the Fano factor and the avalanche multiplication
factor. The collector terminal electron transfer functions are used to discuss the difference.
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