Mr. Nadir Ali Profile

Nadir Ali

at Indian Institute of Technology Roorkee

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Proceedings Article | 19 November 2019 Paper

High performance and CMOS compatible photonic switches based on phase change materials

Rajesh Kumar, Nadir Ali, Shubham Singh

Proceedings Volume 11184, 111840C (2019) https://doi.org/10.1117/12.2538866

KEYWORDS: Switches, Switching, Silicon, Optical communications, CMOS technology, Waveguides, Optical interconnects, Thermography, Crystals, Photonic crystals

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Photonic switches based on phase change materials that are nonvolatile in nature and consume lesser power during switching process while having ultra-low footprint are emerging fast to address the challenges faced by modern interconnects. In addition to optical interconnects and optical communication at 1.55 μm wavelength, such devices are likely to be in great demand for emerging optical communication window around 2 μm wavelength. The switching in phase change materials can be triggered by electrical, optical or thermal means. One such material Ge₂Sb₂Te₅ is technologically mature, cost effective and compatible with CMOS fabrication technology. It can exist in amorphous as well as crystalline phase and remains stable in both the phases. It can be switched rapidly and repeatedly for realizing photonic switching devices around wavelengths 1.55 μm and 2.0 μm. By integrating Ge₂Sb₂Te₅ on silicon-on-insulator platform, the switching functionalities with high performance can be achieved. Here, we present various types of switches based on different hybrid Ge₂Sb₂Te₅-Silicon waveguide. Different geometries will be discussed for operational wavelengths of 1.55 μm and 2.0 μm. Different design strategies that lead to realization of high performance photonic switches in terms of extinction ratio, insertion loss, switching energy and re-configurability using ultra-compact Ge₂Sb₂Te₅ embedded within the silicon waveguide and having indium tin oxide electrodes are described in detail.

Proceedings Article | 14 February 2019 Paper

Design and simulations of photonic switch using hybrid Ge2Sb2Te5-silicon waveguides in mid-IR region

Nadir Ali, Rajesh Kumar

Proceedings Volume 11048, 1104836 (2019) https://doi.org/10.1117/12.2522258

KEYWORDS: Silicon, Waveguides, Switches, Germanium, Antimony, Tellurium, Refractive index, Optical communications, Switching, Mid-IR

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A new window of optical communication is emerging around 2 μm. It is important to design and experimentally demonstrate the photonic devices and components that can support the optical communication in this spectral region by providing the functionalities of switching and routing. The silicon photonics platform for realizing the photonic devices and components will be preferred around 2 μm, like other optical communication windows of 1310 nm and 1550 nm, due to availability of cost effective and high yield CMOS fabrication technology. Photonic switches that are non-volatile in nature and consume lesser power while having ultra-low footprint are likely to be in great demand for future optical communication around 2 μm. Here, we report an ultra-compact 1×1 photonic switch operating at 2.1 μm using nonvolatile phase change material Ge₂Sb₂Te₅ embedded in silicon-on-insulator platform. Embedding of Ge₂Sb₂Te₅in silicon-on-insulator waveguide is done in two different ways to evaluate and compare the switching performance. The emphasis has been on optimization of position and dimensions of Ge₂Sb₂Te₅ in partially and fully etched silicon waveguide. We obtained an extinction ratio of 34.04 dB with low insertion loss of 0.49 dB in ON state with Ge₂Sb₂Te₅ of volume 920 nm× 240 nm × 800 nm (length × height × width) embedded into partially etched silicon waveguide. When Ge₂Sb₂Te₅ is embedded in fully etched silicon waveguide, maximum extinction ratio of ~14dB at the expense of insertion loss of 1.36 dB with Ge₂Sb₂Te₅ of volume 1020 nm× 240 nm × 800 nm.

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