GaSb based cells as receivers in thermophotovoltaic system have attracted great interest and been extensively studied in
the recent 15 years. Although nowadays the manufacturing technologies have made a great progress, there are still some
details need to make a further study. In this paper, undoped and doped GaSb layers were grown on n-GaSb (100)
substrates from both Ga-rich and Sb-rich solutions using liquid phase epitaxy (LPE) technique. The nominal segregation
coefficients k of intentional doped Zn were 1.4 and 8.8 determined from the two kinds of GaSb epitaxial layers.
Additionally, compared with growing from Ga-rich solutions, the growing processes from Sb-rich solutions were much
easier to control and the surface morphologies of epitaxial layers were smoother. Furthermore, in order to broaden the
absorbing edge, Ga1-xInxAsySb1-y quaternary alloys were grown on both GaSb and InAs substrates from In-rich solutions,
under different temperature respectively.
Under high concentration the temperature of photovoltaic solar cells is very high. It is well known that the efficiency and
performance of photovoltaic solar cells decrease with the increase of temperature. So cooling is indispensable for a
concentrator photovoltaic solar cell at high concentration. Usually passive cooling is widely considered in a concentrator
system. However, the thermal conduction principle of concentrator solar cells under passive cooling is seldom reported.
In this paper, GaInP/GaAs/Ge triple junction solar cells were fabricated using metal organic chemical vapor deposition
technique. The thermal conductivity performance of monolithic concentrator GaInP/GaAs/Ge cascade solar cells under
400X concentration with a heat sink were studied by testing the surface and backside temperatures of solar cells. The
tested result shows that temperature difference between both sides of the solar cells is about 1K. A theoretical model of
the thermal conductivity and thermal resistance of the GaInP/GaAs/Ge triple junction solar cells was built, and the
calculation temperature difference between both sides of the solar cells is about 0.724K which is consistent with the
result of practical test. Combining the theoretical model and the practical testing with the upper surface temperature of
tested 310K, the temperature distribution of the solar cells was researched.
The influences of point defects, dislocations, and precipitates on the lattice parameter of undoped semi- insulating GaAs single crystals were analyzed. It was shown that dislocations in such crystals serve as effective gettering sites for As interstitials due to the deformation energy of dislocations. The lattice parameters of these dislocated regions remain relatively constant due to the counterbalance between lattice compression and dilation around the dislocation. Regions away from dislocations show a linear dependence of lattice parameter with As interstitial concentration. Measurements of the lattice parameter in these latter regions by the nondestructive measurement of stoichiometry technique can be used to determine As interstitial concentrations. The nonuniformity in semi-insulating GaAs results in the variation in the threshold voltages of corresponding devices.
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