This study investigates the laser-induced damage threshold (LIDT) in IT-CCD under irradiation from 532nm and 1064nm laser pulses, both with a pulse duration of 50 ns, to explore the wavelength dependence on damage susceptibility. The LIDT values for silicon wafers and IT-CCD were measured, revealing a significantly lower LIDT under 532nm irradiation compared to 1064nm. The disparity is attributed to the differing absorption coefficients of silicon at these wavelengths, which influences the depth of light penetration. To validate this finding, a microstructural model of ITCCD pixel unit with actual physical dimensions was constructed. This model was employed to simulate the intensity distribution of the incident laser light at different wavelengths, as well as to analyze the subsequent thermal response within the pixel unit due to light absorption. The ray tracing simulations demonstrated that the light intensity distribution within a pixel unit was almost identical for both wavelengths after being focused by the microlens array. Based on the Fourier heat conduction equation, the temperature distribution within the IT-CCD pixel unit was calculated. It was found that when the damage criterion was set as the melting point of the photosensitive surface's central region, the predicted LIDT by the model closely corresponded to the experimentally obtained point damage threshold for IT-CCD. This agreement indicates that surface melting is the predominant mechanism for point damage in IT-CCD.
In recent years, the broad applicability, non-contact nature, high precision, and low energy consumption of laser processing have made its application increasingly widespread in fields such as aerospace, medical, and electronic consumer products. Femtosecond and nanosecond lasers are representatives of high quality and high efficiency, respectively. This article takes semiconductor silicon as the research object, and carries out experiments to enhance processing efficiency under different delays and different energy ratios through the combined technical path of femtosecond and nanosecond lasers. Combined with the measurement results of the material’s three-dimensional morphology, the ablation area and roughness are used as criteria to study the impact of delay and energy ratio on the enhancement effect. The experimental results show that for semiconductor silicon, the enhancement phenomenon occurs at positive delays, and effective enhancement will only occur when the femtosecond energy density exceeds the damage threshold. As the femtosecond laser intensity increases from 0.5Fth-to 25Fth-, the enhancement effect becomes more significant.
Germanium is widely used as lens or windows in infrared optical systems, however, germanium optical elements may be damaged by melting under high energy laser irradiation. Therefore, it is necessary to carry out theoretical and experiment research on laser damage threshold of the germanium optical material. In this paper, the effect of laser beam diameter on the damage threshold of germanium was analyzed by numerical calculation. Besides, the difference of damage threshold represented using line power density and area power density was compared. It was found that when the diameter ratio of beam spot to sample was 0.02 to 0.09, the damage threshold decreased by 27.9% and 85.6%, respectively, when using W/cm and W/cm2 as the unit correspondingly. Considering the difference between the size of the beam and the element in optical system, the line power density is more suitable for extrapolation and comparison. In addition, the numerical results were verified by damage threshold experiment under the continuous laser of 1080 nm, which indicates the damage threshold of germanium is 263W/cm, 280W/cm and 290W/cm respectively, and the beam diameter is 0.5mm, 1mm and 2mm correspondingly. It was found that when the diameter ratio of beam spot to sample was 0.021 to 0.083, the damage threshold increased by 10.3% and decreased by 85.6%, respectively, when using W/cm and W/cm2 as the unit correspondingly. These results provide data support for the design and application of germanium optical elements to ensure the reliability of the high energy laser system.
As located in the focal plane of the imaging system, the image sensor will be easily influenced by the huge optical gain, which is brought in the image sensor by the external optical system and microlens on the surface of the device. Laser has a great influence on the image sensor, which is a sensitive link of the anti-laser reinforcement of the imaging system. Improving the performance in extreme light conditions in order to study the vulnerability of image has an important significance of reinforcement. As a typical visible light image sensor, which has advantages of sensitivity, high dynamic, small, light and so on, IT-CCD has been widely used in the fields of reconnaissance, detection and military. An 800nm femtosecond pulse laser was used to carry out experimental research on the laser irradiation effect of IT-CCD. The results shown that the local pixel of IT-CCD was in a state between undamaged and the white point damaged after irradiating by the laser, which was named by gray point. It was shown that the influenced pixels of IT CCD were changed by the laser, but no obvious deformation occurred. Through microscopic detection and analysis, the damage mechanism was expounded, further analysis was done. With focus ion beam (FIB) technique, it was found that there was photosensitive potential well, micro-structure of SiNx filling layer under microlens of the IT-CCD. When the gray point damage occurred, neither the photosensitive potential well at the bottom of the device was damaged, nor was the microlens structure on the surface. It turned out that the SiNx filling layer was influenced by the laser. Through elucidating the mechanism of this damage of the gray point, it lays a foundation for damage mechanism research.
In order to study the mechanisms of thermal damage during laser machining in GaInP/GaAs/Ge tandem solar cells (TSCs), the spatial electroluminescence (EL) characterization on sub-cells pre and post laser irradiation was carried out. Results showed that post laser irradiation, the EL of GaAs middle cell increased to saturation in the damage zone, but decreased to zero at the rest part. A theory was put up to explain this phenomenon by using two-unit equivalent circuit model, and then verified through GaInP top cell spatial EL analysis. Conclusion was drawn that current redistribution induced by local shunt resistance decreasing in GaInP top cell was the main cause for the EL enhancement in GaAs middle cell.
In this paper, a series of effects of CCD interaction with laser are taken together in consideration. These effects divide the light intensity axis into three sections named respectively as ‘normal’, ‘dazzle’ and ‘damage’, along the positive direction. For the effects on first two sections, a general model is proposed to describe them, which reflect the performance jump charateristics of CCD under laser irradiation. In fact, the model contains the jump functions of three performance parameters, which are response efficiency, charge transfer inefficiency and leakage current. Thereinto, the first is used to describe the pixel itself, and the remaining two are used to describe the influence between pixels. The leakage current parameters include a variety of situations, such as the leakage current between pixels, the leakage current between channels and even the leakage current between subarrays in a large array. When all three kinds of parameters don’t jump, the CCD works normal. When anyone of them jumps, the CCD is dazzled by light. Of course, the parameter jump in a dazzled CCD can return to normal when light intensity decreases. However, the damage section on light intensity axis is temporarily not described in this paper. After all, the damaged CCD is not a CCD again.
To increase the lifetime of components in high power lasers and to study downstream light field the influence of the damaged optical components, numerical model of surface profile of damaged optical components were built with particle swarm optimization algorithm, and the relationship between the damage degree and the parameter of numerical model was analyzed. First laser irradiation experiment was carried out to acquire the damaged optical components. Then surface morphology was measured with Zygo interferometer system. With a typical Gaussian filter. A numerical model of one dimensional lineout of surface profile was established with particle swarm optimization algorithm. Numerical results shows that the model was valid with the particle swarm optimization (PSO) algorithm. The results also shows that there was a relationship between parameter of the model and the damage degree.
The effect of single junction GaAs solar cells irradiated by 808nm, 1070nm and 10.6um CW lasers is investigated. The results show that, as long as under the same laser coupling intensity, the damage modes of solar cells under different irradiation conditions are similar. With the increase of laser coupling intensity, the maximum temperature of solar cells rises, and the maximum power of solar cells shows a ‘stair-step’ decline. The multiple irradiation experiments of triple junction GaAs solar cells by 1070nm CW laser are carried out. The results show that when the laser intensity is more than 12.8W/cm2 , the performance degradation of solar cells will show a significant accumulation effect. In addition, the thermal sensitive damage factors are explored and verified. The results show that the maximum temperature and the duration of high temperature are sensitive factors for laser irradiation damage of solar cells.
Three types of laser irradiating experiments on single junction GaAs solar cells with the same laser energy coupling intensity were carried out, which were irradiated by in-band (808 nm) and out-of-band (1.07 μm) continuous wave lasers respectively and simultaneously. On the basis of the changes of current-voltage characteristic curves of irradiated solar cells, the damage degrees could be divided into three stages which were gently, seriously and thoroughly damaged stages. The damage mechanism was studied from two aspects: output changes of solar cell equivalent circuit under different configuration settings, thermal analysis model. The results show that damage degrees of gently and thoroughly damaged stages is insensitive to irradiation intensity. However, the damage degree of seriously damaged stage is sensitive to irradiation intensity and this is regarded to be related to thermal decomposition of GaAs. Moreover, the increase of PN junction defects leads to performance degradation of irradiated solar cells. In conclusion, the thermal damage leads to the increase of PN junction defects, thus results in the performance degradation of cells.
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