Mr. Philip van Gemmern Profile

Philip van Gemmern

at RWTH-Aachen

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Proceedings Article | 21 June 2004 Paper

Investigation of AlGaN buffer layers on sapphire grown by MOVPE

Philipp van Gemmern, Yilmaz Dikme, Necmi Biyikli, Holger Kalisch, Ekmel Ozbay, Rolf Jansen, Michael Heuken

Proceedings Volume 5366, (2004) https://doi.org/10.1117/12.529952

KEYWORDS: Aluminum, Aluminum nitride, Sapphire, Spectroscopy, Gallium, Hydrogen, Light emitting diodes, Reflectivity, Transmittance, Optical testing

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In this work, AlGaN layers were grown on sapphire by metal-organic vapor phase epitaxy (MOVPE) on (0001)-oriented sapphire substrates, with the intention to investigate the effect of varying Al/MO and V/III ratios on the Al incorporation into the AlGaN layers. The parameters Al/MO and V/III describe the proportions of source material inside the reactor. With the help of optical transmission measurements, characteristic cut-off wavelengths of the AlGaN layers were determined. These wavelengths were used to calculate the Al content x of the layers, leading to values between 26.6% and 52.1%. Using the two process parameters Al/MO and V/III as input and the Al content of the AlGaN layers as a response variable, the experimental results were further investigated with the help of the software STATGRAPHICS. An estimated response surface for the variable x was generated. It was found that the Al incorporation is only tunable within a wide range for high V/III ratios of about 900. For constant Al/MO ratios and varying V/III ratios, two different growth characteristics were observed at high and low Al/MO values. This behavior is ascribed to the superposition of two oppositional effects.

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