Dr. Robert Rehm Profile

Dr. Robert Rehm

at Fraunhofer-IAF

SPIE Involvement:

Author

Publications (45)

Proceedings Article | 1 November 2024 Presentation + Paper

Progress on InGaAs-based SPAD fabrication for SWIR detection and imaging

Frank Rutz, Andreas Wörl, Andreas Bächle, Jasmin Niemasz, Robert Rehm

Proceedings Volume 13200, 132000Z (2024) https://doi.org/10.1117/12.3031445

KEYWORDS: Single photon avalanche diodes, Short wave infrared radiation, Diffusion, Doping, Zinc, Indium gallium arsenide, Fabrication, Etching, Quantum efficiency, Electric fields, Semiconductor process technologies

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Proceedings Article | 10 June 2024 Presentation

Enhancement of quantum efficiency via tuning electric-field distribution for long-wavelength infrared InAs/GaSb type-II superlattice detectors

Quankui Yang, Raphael Müller, Mark Wobrock, Wolfgang Luppold, Volker Daumer, Robert Rehm

Proceedings Volume 13046, 130460G (2024) https://doi.org/10.1117/12.3013274

KEYWORDS: Quantum efficiency, Long wavelength infrared, Superlattices, Electric fields, Quantum enhancement, Infrared detectors, Fabry–Perot interferometers, Detector arrays, Coating thickness, Zone plates

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Proceedings Article | 7 June 2024 Presentation + Paper

Advances in entangled-photon sources and single-photon avalanche diodes for quantum technologies in the SWIR

Frank Rutz, Thorsten Passow, Andreas Wörl, Raphael Müller, Quankui Yang, Vivienne Leidel, Andreas Bächle, Elke Diwo-Emmer, Jasmin Niemasz, Silvia Giudicatti, Volker Daumer, Robert Rehm

Proceedings Volume 13025, 130250B (2024) https://doi.org/10.1117/12.3013721

KEYWORDS: Single photon avalanche diodes, Photons, Diffusion, Quantum entanglement, Short wave infrared radiation, Etching, Zinc, Refractive index, Quantum technologies, Quantum processes

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Proceedings Article | 23 October 2023 Presentation + Paper

Investigation of InGaAsSb-based heterojunction photodiodes for extended SWIR imaging

A. Wörl, R. Müller, V. Daumer, J. Niemasz, F. Rutz, R. Rehm

Proceedings Volume 12737, 1273707 (2023) https://doi.org/10.1117/12.2680004

KEYWORDS: Photodiodes, Indium gallium arsenide antimonide, Short wave infrared radiation, Dark current, Heterojunctions, Gallium antimonide, Indium gallium arsenide, Photodetectors, Indium, Infrared imaging

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Proceedings Article | 17 October 2023 Presentation + Paper

Fabrication of InGaAs/InP single-photon avalanche diodes for SWIR active imaging

F. Rutz, A. Wörl, A. Bächle, J. Niemasz, R. Rehm

Proceedings Volume 12740, 127400C (2023) https://doi.org/10.1117/12.2675617

KEYWORDS: Single photon avalanche diodes, Diffusion, Zinc, Short wave infrared radiation, Indium gallium arsenide, Fabrication, Active imaging, Quantum processes, Metalorganic chemical vapor deposition, LIDAR

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Proceedings Article | 12 July 2023 Open Access

III-V-based high-performance photodetectors in the non-visible regime: from UV to IR

Volker Daumer, R. Aidam, Andreas Bächle, Rachid Driad, Tsvetelina Hugger, R. Keil, Lutz Kirste, Stefano Leone, Wolfgang Luppold, Christian Manz, Raphael Müller, Jasmin Niemasz, Thorsten Passow, Robert Rehm, Frank Rutz, Tim Stadelmann, Mark Wobrock, Andreas Wörl, Quankui Yang

Proceedings Volume 12777, 127772F (2023) https://doi.org/10.1117/12.2689983

KEYWORDS: Dark current, Photodetectors, Detector arrays, Ultraviolet radiation, Mid-IR, Staring arrays, Short wave infrared radiation, Diodes, Readout integrated circuits, Long wavelength infrared

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Proceedings Article | 9 October 2019 Paper

Low-light-level SWIR photodetectors based on the InGaAs material system

F. Rutz, R. Aidam, A. Bächle, J. Niemasz, A. Zibold, M. Schepperle, R. Rehm

Proceedings Volume 11159, 1115906 (2019) https://doi.org/10.1117/12.2533015

KEYWORDS: Short wave infrared radiation, Indium gallium arsenide, Photodetectors, Laser sources, LIDAR, Avalanche photodetectors, PIN photodiodes, Sensors, Infrared imaging, Infrared radiation

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The short-wavelength infrared (SWIR) regime between 1 and 3 μm is of high interest especially for surveillance, reconnaissance, and remote sensing applications. The availability of high-power, yet eye-safe SWIR laser sources is an important asset enabling scene illumination and implementation of advanced active imaging concepts like gated viewing (GV) or light detection and ranging (LIDAR). With atmospheric nightglow also a natural, but faint source for scene illumination is available for passive low-light-level imaging in the SWIR region. The most commonly employed material system for realizing SWIR photodetectors is InGaAs with an indium content of 53%. The spectral sensitivity of In_0.53Ga_0.47As with its cut-off wavelength of 1.7 μm covers a wide part of the nightglow spectrum as well the emission lines of available laser sources at typical telecom wavelengths around 1.55 μm. However, for low-light-level passive SWIR imaging a dark-current density around 10^-9 A/cm² is considered mandatory. While the international state-of-the-art has already achieved this performance at room-temperature operation, today’s European stateof- the-art is still lagging behind. The development of InGaAs-based SWIR detectors at Fraunhofer IAF aims at pin as well as avalanche photodiodes (APDs) for imaging applications with 640×512 pixels. While InGaAs APDs play to their strength in GV applications with typically rather short integration times, planar processed InGaAs/InP pin photodiodes with lowest possible dark-current and noise characteristics are the detector devices of choice for passive low-light-level detection. Within a few planar-process batches, we approached the European state-of-the-art for the dark-current density of 15-μm-pitch InGaAs pin detectors by a remaining factor of five. The most recent process run yielded further slightly improved dark-current characteristics on test devices. Recently, we have started with in-house characterization of such focal plane detector arrays hybridized with suitable SWIR read-out integrated circuits.

Proceedings Article | 12 July 2019 Open Access

Type-II superlattices: a promising material for space applications

V. Daumer, F. Rutz, A. Wörl, J. Niemasz, R. Müller, T. Stadelmann, R. Rehm

Proceedings Volume 11180, 111806J (2019) https://doi.org/10.1117/12.2536154

KEYWORDS: Sensors, Heterojunctions, Mercury cadmium telluride, Superlattices, Long wavelength infrared, Gallium antimonide, Detector arrays, Mid-IR, Indium arsenide, Semiconducting wafers

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Proceedings Article | 7 May 2019 Paper

Industrialization of type-II superlattice infrared detector technology at Fraunhofer IAF

M. Walther, V. Daumer, F. Rutz, T. Stadelmann, V. Klinger, A. Wörl, J. Niemasz, L. Kirste, R. Rehm

Proceedings Volume 11002, 110020C (2019) https://doi.org/10.1117/12.2518424

KEYWORDS: Sensors, Superlattices, Diodes, Infrared detectors, Gallium antimonide, Indium arsenide, Semiconducting wafers, Mercury cadmium telluride, Infrared sensors

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Proceedings Article | 7 May 2019 Paper

InGaAs SWIR photodetectors for night vision

F. Rutz, A. Bächle, R. Aidam, J. Niemasz, W. Bronner, A. Zibold, R. Rehm

Proceedings Volume 11002, 1100211 (2019) https://doi.org/10.1117/12.2518634

KEYWORDS: Short wave infrared radiation, Indium gallium arsenide, Cameras, Photodetectors, PIN photodiodes, Avalanche photodetectors, Sensors, Imaging systems, Staring arrays, Night vision

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Proceedings Article | 27 February 2019 Open Access

Advances on photoconductive InAs/GaSb type-II superlattice long-wavelength infrared detectors for high operating temperature

Raphael Müller, Jasmin Niemasz, Volker Daumer, Andrzej Janaszek, Jarosław Jureńczyk, Robert Rehm

Proceedings Volume 10914, 1091416 (2019) https://doi.org/10.1117/12.2506624

KEYWORDS: Sensors, Photoresistors, Semiconducting wafers, Long wavelength infrared, Superlattices, Resistance, Gallium arsenide, Electro optics, Infrared sensors, Gallium antimonide

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Proceedings Article | 9 October 2018 Paper

InGaAs-based SWIR photodetectors for night vision and gated viewing

F. Rutz, R. Aidam, A. Bächle, H. Heußen, W. Bronner, R. Rehm, M. Benecke, A. Sieck, S. Brunner, B. Göhler, P. Lutzmann

Proceedings Volume 10795, 1079503 (2018) https://doi.org/10.1117/12.2325665

KEYWORDS: Short wave infrared radiation, Avalanche photodetectors, Cameras, Sensors, Indium gallium arsenide, Zinc, Diffusion, Staring arrays, Photodetectors, Gated imaging, Night vision

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Proceedings Article | 23 May 2018 Paper

Type II superlattice infrared photodetector research at Fraunhofer IAF

T. Stadelmann, V. Daumer, V. Gramich, T. Hugger, L. Kirste, V. Klinger, N. Kohn, W. Luppold, R. Müller, J. Niemasz, R. Rehm, F. Rutz, J. Schmidt, M. Walther, M. Wauro, A. Wörl

Proceedings Volume 10624, 106240J (2018) https://doi.org/10.1117/12.2305116

KEYWORDS: Semiconducting wafers, Sensors, Photodiodes, Mid-IR, Heterojunctions, Long wavelength infrared, Photodetectors, Diodes, Superlattices, Infrared sensors

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Proceedings Article | 16 May 2017 Paper

Photodetector development at Fraunhofer IAF: From LWIR to SWIR operating from cryogenic close to room temperature

V. Daumer, V. Gramich, R. Müller, J. Schmidt, F. Rutz, T. Stadelmann, A. Wörl, R. Rehm

Proceedings Volume 10177, 1017711 (2017) https://doi.org/10.1117/12.2262509

KEYWORDS: Heterojunctions, Avalanche photodetectors, Diodes, Infrared radiation, Photodetectors, Mid-IR, Sensors, Long wavelength infrared, Short wave infrared radiation, Infrared sensors, Superlattices, Thermography, Indium gallium arsenide

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Proceedings Article | 21 October 2016 Paper

Advances in the characterization of InAs/GaSb superlattice infrared photodetectors

A. Wörl, V. Daumer, T. Hugger, N. Kohn, W. Luppold, R. Müller, J. Niemasz, R. Rehm, F. Rutz, J. Schmidt, J. Schmitz, T. Stadelmann, M. Wauro

Proceedings Volume 9987, 99870U (2016) https://doi.org/10.1117/12.2240949

KEYWORDS: Sensors, Imaging systems, Superlattices, Infrared radiation, Photodetectors, Long wavelength infrared, Diodes, Semiconducting wafers, Electro optics, Heterojunctions

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Proceedings Article | 19 September 2016 Paper

SWIR detectors for low photon fluxes

Frank Rutz, Philipp Kleinow, Rolf Aidam, Wolfgang Bronner, Lukas Stolch, Matthias Benecke, Alexander Sieck, Robert Rehm

Proceedings Volume 9974, 99740G (2016) https://doi.org/10.1117/12.2236484

KEYWORDS: Short wave infrared radiation, Sensors, Photodetectors, Avalanche photodetectors, Cameras, Readout integrated circuits, Indium gallium arsenide, Signal to noise ratio, Electro optical sensors, Electro optics

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Proceedings Article | 20 May 2016 Paper

Type-II superlattice infrared detector technology at Fraunhofer IAF

Robert Rehm, Volker Daumer, Tsvetelina Hugger, Norbert Kohn, Wolfgang Luppold, Raphael Müller, Jasmin Niemasz, Johannes Schmidt, Frank Rutz, Tim Stadelmann, Matthias Wauro, Andreas Wörl

Proceedings Volume 9819, 98190X (2016) https://doi.org/10.1117/12.2223887

KEYWORDS: Infrared detectors, Sensors, Superlattices, Long wavelength infrared, Infrared sensors, Mid-IR, Photodetectors, Imaging systems, Semiconducting wafers, Mercury cadmium telluride

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Proceedings Article | 4 June 2015 Paper

Limiting dark current mechanisms in antimony-based superlattice infrared detectors for the long-wavelength infrared regime

Robert Rehm, Florian Lemke, Johannes Schmitz, Matthias Wauro, Martin Walther

Proceedings Volume 9451, 94510N (2015) https://doi.org/10.1117/12.2177091

KEYWORDS: Photodiodes, Stereolithography, Semiconducting wafers, Long wavelength infrared, Diodes, Superlattices, Diffusion, Resistance, Infrared detectors, Temperature metrology

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Proceedings Article | 24 June 2014 Paper

Development of bi-spectral InAs/GaSb type II superlattice image detectors

T. Stadelmann, A. Wörl, M. Wauro, V. Daumer, J. Niemasz, W. Luppold, T. Simon, M. Riedel, R. Rehm, M. Walther

Proceedings Volume 9070, 90700V (2014) https://doi.org/10.1117/12.2049951

KEYWORDS: Sensors, Image sensors, Superlattices, Mid-IR, Manufacturing, Diodes, Long wavelength infrared, Infrared sensors, Dielectrics, Photodiodes

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Proceedings Article | 24 June 2014 Paper

InAs/GaSb superlattice detectors for the long-wavelength infrared regime

Robert Rehm, Michael Masur, Johannes Schmitz, Martin Walther

Proceedings Volume 9070, 90700T (2014) https://doi.org/10.1117/12.2050438

KEYWORDS: Heterojunctions, Stereolithography, Superlattices, Long wavelength infrared, Sensors, Laser sintering, Doping, Gallium antimonide, Infrared sensors, Indium arsenide

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Proceedings Article | 31 January 2014 Paper

Infrared photodetector development at Fraunhofer IAF

F. Rutz, P. Kleinow, M. Walther, R. Aidam, W. Bronner, L. Kirste, J. Niemasz, R. Rehm, J. Schmitz, T. Stadelmann, M. Wauro, A. Wörl, A. Sieck, J. Ziegler

Proceedings Volume 8993, 89930W (2014) https://doi.org/10.1117/12.2039521

KEYWORDS: Sensors, Short wave infrared radiation, Indium gallium arsenide, Infrared radiation, Photodetectors, Avalanche photodetectors, Infrared detectors, Infrared sensors, Infrared photography, Long wavelength infrared

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Proceedings Article | 11 June 2013 Paper

Defects and noise in Type-II superlattice infrared detectors

Martin Walther, Andreas Wörl, Volker Daumer, Robert Rehm, Lutz Kirste, Frank Rutz, Johannes Schmitz

Proceedings Volume 8704, 87040U (2013) https://doi.org/10.1117/12.2015926

KEYWORDS: Diodes, Gallium antimonide, Etching, Palladium, Mid-IR, Data modeling, Superlattices, Semiconducting wafers, Photodiodes, Wet etching

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Proceedings Article | 4 February 2013 Paper

Noise in InAs/GaSb type-II superlattice photodiodes

R. Rehm, A. Wörl, M. Walther

Proceedings Volume 8631, 86311M (2013) https://doi.org/10.1117/12.2013854

KEYWORDS: Diodes, Mid-IR, Long wavelength infrared, Photodiodes, Stereolithography, Palladium, Data modeling, Superlattices, Electrons, Switching

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Proceedings Article | 21 May 2011 Paper

The development of 3[sup]rd[/sup] generation IR detectors at AIM

J. Ziegler, D. Eich, M. Mahlein, T. Schallenberg, R. Scheibner, J. Wendler, J. Wenisch, R. Wollrab, V. Daumer, R. Rehm, F. Rutz, M. Walther

Proceedings Volume 8012, 801237 (2011) https://doi.org/10.1117/12.883888

KEYWORDS: Sensors, Long wavelength infrared, Mid-IR, Staring arrays, Diodes, Medium wave, Readout integrated circuits, Gallium arsenide, Etching, Infrared detectors

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Proceedings Article | 21 May 2011 Paper

Current developments for type-II superlattice imaging systems

Frank Rutz, Robert Rehm, Martin Walther, Lutz Kirste, Michael Masur, Andreas Wörl, Johannes Schmitz, Matthias Wauro, Jasmin Niemasz, Ralf Scheibner, Johann Ziegler

Proceedings Volume 8012, 80120U (2011) https://doi.org/10.1117/12.883786

KEYWORDS: Gallium antimonide, Semiconducting wafers, Sensors, Stereolithography, Superlattices, Detector arrays, Thermography, Etching, Staring arrays, Mid-IR

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Proceedings Article | 24 January 2011 Paper

Defect density reduction in InAs/GaSb type II superlattice focal plane array infrared detectors

Martin Walther, Robert Rehm, Johannes Schmitz, Jasmin Niemasz, Frank Rutz, Andreas Wörl, Lutz Kirste, Ralf Scheibner, Joachim Wendler, Johann Ziegler

Proceedings Volume 7945, 79451N (2011) https://doi.org/10.1117/12.875159

KEYWORDS: Gallium antimonide, Sensors, Stereolithography, Semiconducting wafers, Infrared detectors, Staring arrays, Etching, Superlattices, Imaging systems, Cameras

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Proceedings Article | 4 May 2010 Paper

Type-II superlattices: the Fraunhofer perspective

Robert Rehm, Martin Walther, Johannes Schmitz, Frank Rutz, Andreas Wörl, Ralf Scheibner, Johann Ziegler

Proceedings Volume 7660, 76601G (2010) https://doi.org/10.1117/12.850172

KEYWORDS: Diodes, Gallium antimonide, Stereolithography, Sensors, Photodiodes, Detector arrays, Semiconducting wafers, Superlattices, Imaging systems, Infrared imaging

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Proceedings Article | 23 January 2010 Paper

InAs/GaSb type II superlattices for advanced 2nd and 3rd generation detectors

Martin Walther, Robert Rehm, Johannes Schmitz, Joachim Fleissner, Frank Rutz, Lutz Kirste, Ralf Scheibner, Joachim Wendler, Johann Ziegler

Proceedings Volume 7608, 76081Z (2010) https://doi.org/10.1117/12.842065

KEYWORDS: Gallium antimonide, Stereolithography, Sensors, Imaging systems, Superlattices, Thermography, Indium arsenide, Mid-IR, Cameras, Infrared detectors

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Proceedings Article | 24 September 2009 Paper

Advanced III/V quantum-structure devices for high performance infrared focal plane arrays

Robert Rehm, Martin Walther, Johannes Schmitz, Frank Rutz, Joachim Fleissner, Ralf Scheibner, Johann Ziegler

Proceedings Volume 7481, 74810E (2009) https://doi.org/10.1117/12.835153

KEYWORDS: Quantum well infrared photodetectors, Sensors, Stereolithography, Readout integrated circuits, Staring arrays, Superlattices, Infrared imaging, Infrared radiation, Silicon, Imaging systems

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Proceedings Article | 7 May 2009 Paper

InAs/GaSb superlattice focal plane array infrared detectors: manufacturing aspects

Frank Rutz, Robert Rehm, Johannes Schmitz, Joachim Fleissner, Martin Walther, Ralf Scheibner, Johann Ziegler

Proceedings Volume 7298, 72981R (2009) https://doi.org/10.1117/12.819090

KEYWORDS: Stereolithography, Sensors, Semiconducting wafers, Superlattices, Gallium antimonide, Cameras, Etching, Mid-IR, Staring arrays, Imaging systems

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Proceedings Article | 26 January 2009 Paper

Status of mid-infrared superlattice technology in Germany

Robert Rehm, Martin Walther, Johannes Schmitz, Frank Rutz, Joachim Fleissner, Ralf Scheibner, Johann Ziegler

Proceedings Volume 7222, 72220T (2009) https://doi.org/10.1117/12.809045

KEYWORDS: Superlattices, Sensors, Mid-IR, Stereolithography, Quantum efficiency, Semiconducting wafers, Cameras, Photodiodes, Absorption, Diodes

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Proceedings Article | 1 May 2008 Paper

Design optimization of superlattice type-II IR-detection modules with temporal signal coincidence in two spectral ranges

R. Breiter, H. Lutz, R. Scheibner, J. Wendler, K. Hofmann, J. Ziegler, M. Walther, R. Rehm

Proceedings Volume 6940, 69400B (2008) https://doi.org/10.1117/12.773918

KEYWORDS: Sensors, Stereolithography, Superlattices, Staring arrays, Readout integrated circuits, Quantum efficiency, Infrared sensors, Infrared detectors, Missiles, Quantum well infrared photodetectors

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Proceedings Article | 15 April 2008 Paper

Antimony-based superlattices for high-performance infrared imagers

Martin Walther, Robert Rehm, Johannes Schmitz, Frank Rutz, Joachim Fleissner, Johann Ziegler

Proceedings Volume 6940, 69400A (2008) https://doi.org/10.1117/12.777515

KEYWORDS: Stereolithography, Sensors, Diodes, Imaging systems, Mid-IR, Superlattices, Thermography, Cameras, Quantum efficiency, Gallium antimonide

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Proceedings Article | 14 May 2007 Paper

InAs/GaSb type-II short-period superlattices for advanced single and dual-color focal plane arrays

Martin Walther, Robert Rehm, Joachim Fleissner, Johannes Schmitz, Johann Ziegler, Wolfgang Cabanski, Rainer Breiter

Proceedings Volume 6542, 654206 (2007) https://doi.org/10.1117/12.719227

KEYWORDS: Sensors, Stereolithography, Staring arrays, Cameras, Gallium antimonide, Mid-IR, Superlattices, Imaging systems, Thermography, Indium arsenide

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Proceedings Article | 14 May 2007 Paper

Dual color IR detection modules, trends and applications

M. Münzberg, R. Breiter, W. Cabanski, K. Hofmann, H. Lutz, J. Wendler, J. Ziegler, R. Rehm, M. Walther

Proceedings Volume 6542, 654207 (2007) https://doi.org/10.1117/12.718798

KEYWORDS: Sensors, Superlattices, Stereolithography, Staring arrays, Quantum well infrared photodetectors, Missiles, Medium wave, Infrared detectors, Sniper detection, Mid-IR

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The 3rd generation of infrared (IR) detection modules is expected to provide advanced features like higher resolution 1024x1024 or 1280x720 pixels and/or new functions like multicolor or multi band capability, higher frame rates and better thermal resolution. This paper is intended to present the current status and trends at AIM on antimonide type II superlattices (SL) dual color detection module developments for ground and airborne applications in the high performance range, where rapidly changing scenes - like e.g. in case of missile warning applications for airborne platforms or ground based sniper detection systems - require temporal signal coincidence with integration times of typically 1ms. AIM and IAF selected antimonide based type II superlattices (SL) for such kind of applications. The type II SL technology provides - similar to QWIP's - an accurate engineering of sensitive layers by MBE with very good homogeneity and yield. IAF and AIM managed already to realize a dual color 384x288 IR module based on this technology. It combines spectral selective detection in the 3 - 4&mgr;m wavelength range and 4 - 5 &mgr;m wavelength range in each pixel with coincident integration in a 384x288x2 format and 40x40 &mgr;m² pitch. Excellent thermal resolution with NETD < 12 mK @ F/2, 2.8 ms for the longer wavelength range (red band) and NETD < 22 mK @ F/2, 2.8 ms for the shorter wavelength range (blue band) were reported. In the meantime a square design of 256x256x2 pixel with a reduced pitch of 30x30 &mgr;m² is in preparation. In this case with 2 Indium bumps per pixel and a third common contact for all pixels required for temporal coincidence is connected at the outer area of the array. The fill factor is approx. 65% for both wavelength ranges. The reduced size of the array enables the use of a smaller dewar with reduced cooling power and significantly reduced weight and broadens the scope of applications where weight and costs is essential. Design aspects and expected performances are discussed.

Proceedings Article | 7 September 2006 Paper

Second and third generation thermal imagers based on type-II superlattice photodiodes

Robert Rehm, Martin Walther, Johannes Schmitz, Joachim Fleißner, Johann Ziegler, Wolfgang Cabanski, Rainer Breiter

Proceedings Volume 6294, 629404 (2006) https://doi.org/10.1117/12.680495

KEYWORDS: Mid-IR, Sensors, Missiles, Stereolithography, Superlattices, Cameras, Staring arrays, Thermography, Imaging systems, Image processing

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Proceedings Article | 18 May 2006 Paper

Multispectral IR detection modules and applications

M. Münzberg, R. Breiter, W. Cabanski, H. Lutz, J. Wendler, J. Ziegler, R. Rehm, M. Walther

Proceedings Volume 6206, 620627 (2006) https://doi.org/10.1117/12.665467

KEYWORDS: Sensors, Quantum well infrared photodetectors, Stereolithography, Superlattices, Staring arrays, Spectroscopy, Missiles, Quantum efficiency, Readout integrated circuits, Infrared detectors

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This paper is intended to present firstly the current status at AIM on quantum well (QWIP) and antimonide superlattices (SL) detection modules for multi spectral ground and airborne applications in the high performance range i.e. for missile approach warning systems and secondly presents possibilities with long linear arrays i.e. 576x7 MCT to measure spectral selective in the 2 - 11μm wavelength range. QWIP and antimonide based superlattice (SL) modules are developed and produced in a work share between AIM and the Fraunhofer Institute for Applied Solid State Physics (IAF). The sensitive layers are manufactured by the IAF, hybridized and integrated to IDCA or camera level by AIM. In case of MCT based modules, all steps are done by AIM. QWIP dual band or dual color detectors provide good resolution as long as integration times in the order of 5-10ms can be tolerated. This is acceptable for all applications where no fast motions of the platform or the targets are to be expected. For spectral selective detection, a QWIP detector combining 3-5 μm (MWIR) and 8-10 μm (LWIR) detection in each pixel with coincident integration has been developed in a 384x288x2 format with 40 μm pitch. Excellent thermal resolution with NETD < 30 mK @ F/2, 6.8 ms for both peak wavelengths (4.8 μm and 8.0 μm) has been achieved. Thanks to the well established QWIP technology, the pixel outage rates even in these complex structures are well below 0.5% in both bands. The spectral cross talk between the two wavelength bands is equal or less than 1%. The substrate on the sensitive layer of the FPA was completely removed in this case and as a consequence the optical crosstalk in the array usually observed in QWIP arrays resulting in low MTF values was suppressed resulting in sharp image impression. For rapidly changing scenes - like e.g. in case of missile warning applications for airborne platforms - a material system with higher quantum efficiency is required to limit integration times to typically 1ms. AIM and IAF selected antimonide based type II superlattices (SL) for such kind of applications. The type II SL technology provides - similar to QWIPs - an accurate engineering of sensitive layers by MBE with very good homogeneity and potentially good yield and resistivity against high temperature application i.e. under processing or storage. While promising results on single SL pixels have been reported since many years, so far no SL based detection module could be realized with reasonable performances. IAF and AIM last year managed to realize first most promising SL based detectors. Fully integrated IDCAs with a MWIR SL single color device with 256x256 pixels in 40 μm pitch have been integrated and tested. In the next step the pitch was reduced to 24μm in a 384x288 pixel configuration. With this design and further improved technology a very good pixel operabilities with very low cluster sizes (≤ 4 pixel) and performances with quantum efficiencies as high as known from MCT is reached in the meantime. A dual color device based on SL technology on the existing 384x288 read-out circuit (ROIC) as used in the dual band QWIP device is available. It combines spectral selective detection in the 3-4.1 μm wavelength range and 4.1-5 μm wavelength range in each pixel with coincident integration in a 384x288x2 format and 40 μm pitch. Excellent thermal resolution with NETD < 17 mK @ F/2, 2.8 ms for the longer wavelength range (red band) and NETD < 30 mK @ F/2, 2.8 ms for the shorter wavelength range (blue band) has been achieved. The pixel outage rates remains below 1% in both colors. The spectral cross talk of the red band to the blue band is estimated below 1%o which is important to reduce significantly the false alarm rate in missile approach warning systems as the primarily intended use of the dual color detector is. Real time analysis of gases, i.e. the detection of toxic or agent gases, by multi spectral detection in the IR used the characteristic infrared emission or absorption lines of different gas types. Spectroscopic systems consisting of a spectrometer with the need for large linear MCT array with small pixel sizes are used in this case. Possibilities are outlined to use long linear arrays, such as the 576x7 MCT detector, to perform spectral selective measurements in the 2-11μm wavelength range. For these applications a 576x7 MCT FPA is integrated in an open dewar cooler assy without window able to operate directly coupled in an evacuated and cooled spectrometer. The sensitivity of the array is consequently not limited by the transmission of a window for vacuum conservation in the full sensitive wavelength range of MCT up to the cut-off of 10.5 μm.

Proceedings Article | 17 May 2006 Paper

Bispectral thermal imaging with quantum-well infrared photodetectors and InAs/GaSb type-II superlattices

Robert Rehm, Martin Walther, Joachim Fleißner, Johannes Schmitz, Johann Ziegler, Wolfgang Cabanski, Rainer Breiter

Proceedings Volume 6206, 62060Y (2006) https://doi.org/10.1117/12.667627

KEYWORDS: Quantum well infrared photodetectors, Stereolithography, Sensors, Cameras, Medium wave, Thermography, Superlattices, Gallium antimonide, Infrared imaging, Infrared radiation

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Proceedings Article | 29 September 2005 Paper

InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging

Robert Rehm, Martin Walther, Johannes Schmitz, Joachim Fleißner, Frank Fuchs, Johann Ziegler, Wolfgang Cabanski

Proceedings Volume 5957, 595707 (2005) https://doi.org/10.1117/12.627054

KEYWORDS: Indium arsenide, Superlattices, Gallium antimonide, Quantum efficiency, Staring arrays, Sensors, Stereolithography, Cameras, Mid-IR, Thermography

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Proceedings Article | 31 May 2005 Paper

InAs/(GaIn)Sb short-period superlattices for focal plane arrays

Robert Rehm, Martin Walther, Johannes Schmitz, Joachim Fleissner, Frank Fuchs, Wolfgang Cabanski, Johann Ziegler

Proceedings Volume 5783, (2005) https://doi.org/10.1117/12.603420

KEYWORDS: Superlattices, Diodes, Staring arrays, Sensors, Antimony, Gallium, Gallium antimonide, Indium arsenide, Photodiodes, Mid-IR

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Proceedings Article | 31 May 2005 Paper

Third generation focal plane array IR detection modules and applications

W. Cabanski, M. Munzberg, W. Rode, J. Wendler, J. Ziegler, J. Fleissner, F. Fuchs, R. Rehm, J. Schmitz, H. Schneider, M. Walther

Proceedings Volume 5783, (2005) https://doi.org/10.1117/12.605818

KEYWORDS: Stereolithography, Sensors, Quantum well infrared photodetectors, Mid-IR, Staring arrays, Long wavelength infrared, Missiles, Superlattices, Readout integrated circuits, Absorption

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The 3rd generation of infrared (IR) detection modules is expected to provide advanced features like higher resolution 1024x1024 or 1280x720 pixels and/or new functions like multicolor or multi band capability, higher frame rates and better thermal resolution. This paper is intended to present the current status at AIM on quantum well (QWIP) and antimonide superlattices (SL) detection modules for ground and airborne applications in the high performance range. For spectral selective detection, a QWIP detector combining 3-5μm (MWIR) and 8-10μm (LWIR) detection in each pixel with coincident integration has been developed in a 384x288x2 format with 40 μm pitch. Excellent thermal resolution with NETD < 30mK @ F/2, 6.8 ms for both peak wavelengths (4.8 μm and 8.0 μm) has been achieved. Thanks to the well established QWIP technology, the pixel outage rates even in these complex structures are below 0.5% in both bands. QWIP dual band or dual color detectors provide good resolution as long as integration times in the order of 5-10ms can be tolerated. This is acceptable for all applications where no fast motions of the platform or the targets are to be expected. For rapidly changing scenes-like e.g. in case of missile warning applications for airborne platforms-a material system with higher quantum efficiency is required to limit integration times to typically 1ms. AIM and IAF selected antimonide based type II superlattices (SL) for such kind of applications. The SL technology provides-similar to QWIP's-an accurate engineering of sensitive layers by MBE with very good homogeneity and yield. While promising results on single SL pixels have been reported since many years, so far no SL based detection module could be realized. IAF and AIM last year managed to realize first most promising SL based detectors. Fully integrated IDCA's with a MWIR SL device with 256x256 pixels in 40µm pitch have been integrated and tested. The modules exhibit excellent thermal resolution of NETD<10mk @ F/2 and 5ms. Product improvement meanwhile allowed to reduce pixel outage rates below 1% i.e. down to a level as required for the military use of such detectors. Presently under development is therefore a dual color MWIR device based on SL technology and the existing 384x288 read out circuit (ROIC) used in the dual band QWIP device. This detector is primarily intended for the use in missile approach warning systems where the dual color capability significantly improves suppression of false alarms. Details of the modules and results of the electrooptical performance will be presented for the different items mentioned above.

Proceedings Article | 30 August 2004 Paper

Third-generation focal plane array IR detection modules and applications

Wolfgang Cabanski, Kurt Eberhardt, Werner Rode, Joachim Wendler, Johann Ziegler, Joachim Fleissner, Frank Fuchs, Robert Rehm, Johannes Schmitz, Harald Schneider, Martin Walther

Proceedings Volume 5406, (2004) https://doi.org/10.1117/12.542186

KEYWORDS: Stereolithography, Quantum well infrared photodetectors, Sensors, Mid-IR, Long wavelength infrared, Staring arrays, Superlattices, Readout integrated circuits, Quantum efficiency, Infrared detectors

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The 3rd generation of infrared (IR) detection modules is expected to provide advanced features like higher resolution 1024x1024 or 1280x720 pixels and/or new functionalities like multicolor or multi band capability, higher frame rates and better thermal resolution. This paper is intended to present the current status at AIM on the Mercury Cadmium Telluride (MCT), quantum well (QWIP) and antimonide superlattices (SL) detection modules for ground and airborne applications in the high performance range. For high resolution a 1280x720 MCT device in the 3-5μm range (MWIR) is presently under development. For spectral selective detection, a QWIP detector combining MWIR and 8-10μm (LWIR) detection in each pixel has been developed in a 384x288x2 format with 40 μm pitch, NETD < 35mK @ F/2, 6,8 ms for both peak wavelengths (4.8 μm and 8.0 μm). The device provides synchronous integration of both bands for temporal and spatial coincidence of the events observed. QWIP dual band or dual color detectors provide good resolution as long as integration times in the order of 5-10ms can be tolerated. This is acceptable for all applications where no fast motions of the platform or the targets are to be expected. For rapidly changing scenes - like e.g. in case of missile warning applications for airborne platforms - a material system with higher quantum efficiency is required to limit integration times to typically 1ms. For this case, several companies work on molecular beam epitaxy (MBE) of MCT to have access to double or multi layer structures. AIM and IAF selected antimonide based type II superlattices (SL) for such kind of applications. The SL technology provides -- similar to QWIP's -- an accurate engineering of sensitive layers by MBE with very good homogeneity and yield. While promising results on single SL pixels have been reported since many years, so far no SL based detection module could be realized. Just recently, IAF and AIM managed to realize first most promising SL based detectors. Fully integrated IDCAs with a MWIR SL device with 256 x 256 pixels in 40 μm pitch have been integrated and tested. The modules exhibit excellent thermal resolution of NETD > 12 mk @ F/2 and 5 ms. The next step will now be to stabilize the technology and to start the development of a dual color MWIR device based on SL technology and the existing 384 x 288 read out circuit (ROIC) used in the dual band QWIP device.

Proceedings Article | 23 January 2003 Paper

High-resolution QWIP FPAs for the 8- to 12-µm and 3- to 5-µm regimes

Harald Schneider, Joachim Fleissner, Robert Rehm, Martin Walther, Wilfried Pletschen, Peter Koidl, Guenter Weimann, Johann Ziegler, Rainer Breiter, Wolfgang Cabanski

Proceedings Volume 4820, (2003) https://doi.org/10.1117/12.451319

KEYWORDS: Quantum well infrared photodetectors, Mid-IR, Staring arrays, Long wavelength infrared, Sensors, Quantum efficiency, Quantum wells, Cameras, Thermography, Diffraction gratings

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Proceedings Article | 12 June 2001 Paper

Responsivity and gain in InGaAs/GaAs-QWIPs and GaAs/AlGaAs-QWIPs: a comparative study

Robert Rehm, Harald Schneider, K. Schwarz, Martin Walther, Peter Koidl, Guenter Weimann

Proceedings Volume 4288, (2001) https://doi.org/10.1117/12.429424

KEYWORDS: Quantum well infrared photodetectors, Gallium arsenide, Sensors, Doping, Quantum wells, Quantum efficiency, Mirrors, Solids, Black bodies, Imaging systems

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Proceedings Article | 15 December 2000 Paper

Low-noise QWIPs for FPA sensors with high thermal resolution

Harald Schneider, Martin Walther, Joachim Fleissner, Robert Rehm, E. Diwo, K. Schwarz, Peter Koidl, Guenter Weimann, Johann Ziegler, Rainer Breiter, Wolfgang Cabanski

Proceedings Volume 4130, (2000) https://doi.org/10.1117/12.409877

KEYWORDS: Quantum well infrared photodetectors, Sensors, Staring arrays, Cameras, Imaging systems, Quantum wells, Long wavelength infrared, Electrons, Gallium arsenide, Infrared sensors

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Showing 5 of 45 publications

Conference Committee Involvement (2)

Emerging Technologies

23 September 2014 | Amsterdam, Netherlands

Emerging Technologies

25 September 2013 | Dresden, Germany

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