Chirped multilayer (N=10) QD lasers with 2-, 3- and 5-layer of longer-, medium-, and shorter-wavelength QD stacks,
respectively, were grown in this work. Low threshold current density and high saturated modal gain were achieved in
this specially designed QD structure. Empirical gain-current analysis was performed on this chirped multilayer QD
structure for the first time. It was consistent with our spectral observations and provided valuable information on carrier
recombination in chirped multilayer QD structure. Two novel spectral characteristics were discovered also for the first
time. First, simultaneous two-wavelength lasing around threshold was observed under particular gain-loss condition at
this specific multilayer structure of QD stacking numbers. Second, at cryogenic temperature, simultaneous two-wavelength
lasing emissions switched from longer-wavelength lasing first to shorter-wavelength lasing first with
increasing current injection. Non-uniform carrier distribution among chirped multilayer QD structure is evident at low
temperature below 200 K from our analysis.
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