We have been developing the monolithic active pixel detector XRPIX onboard the future x-ray astronomical satellite FORCE. XRPIX is composed of complementary metal-oxide-semiconductor pixel circuits, SiO2 insulator, and Si sensor by utilizing the silicon-on-insulator (SOI) technology. When the semiconductor detector is operated in orbit, it suffers from radiation damage due to x-rays emitted from celestial objects as well as cosmic rays. From previous studies, positive charges trapped in the SiO2 insulator are known to cause degradation of the detector performance. To improve the radiation hardness, we developed XRPIX equipped with a double-SOI (D-SOI) structure, introducing an additional silicon layer in the SiO2 insulator. This structure is aimed at compensating for the effect of the trapped positive charges. Although the radiation hardness of the D-SOI detectors to cosmic rays has been evaluated, the radiation effect due to x-ray irradiation has not been evaluated. Thus, we then conduct an x-ray irradiation experiment using an x-ray generator with a total dose of 10 krad at the SiO2 insulator, equivalent to 7 years in orbit. As a result of this experiment, the energy resolution in full-width half maximum for the 5.9 keV x-ray degrades by 17.8 % ± 2.8 % and the dark current increases by 89 % ± 13 % . We also investigate the physical mechanism of the increase in the dark current due to x-ray irradiation using technology computer-aided design simulation. It is found that the increase in the dark current can be explained by the increase in the interface state density at the Si / SiO2 interface.
X-ray silicon-on-insulator (SOI) pixel sensors, “XRPIX,” are being developed for the next-generation x-ray astronomical satellite, “FORCE.” The XRPIX is fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si complementary metal oxide semiconductor (CMOS) circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with x-ray signals at the timing of x-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor x-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at Heavy Ion Medical Accelerator in Chiba in the National Institute of Radiological Sciences. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 ± 3 % , yielding an energy resolution of 260.1 ± 5.6 eV at the full-width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.
We are developing an X-ray SOI pixel detector “XRPIX” for the next generation X-ray astronomical satellite “FORCE”. XRPIX is the detector using SOI (Silicon-On-Insulator) technology which makes it possible to integrate a high-resistivity Si sensor part and a low-resistivity Si CMOS circuit part. The CMOS circuit is equipped with the trigger function, which can read out only the output signal of the pixel where the X-ray is incident. This function realizes high throughput and high time resolution, enabling the background rejection with anticoincidence technique. A new series of XRPIX named XRPIX6E, we developed, with a Pinned Depleted Diode (PDD) structure improves the spectral performance by suppressing the interference between the sensor layer and the circuit layer. When semiconductor X-ray detectors are used in space, it is known that their spectral performance is degraded due to radiation damage caused by high-energy protons. Therefore, before using XRPIX in space, it is necessary to evaluate how much the spectral performance will be degraded by radiation damage. Then we performed proton irradiation experiment for XRPIX6E for the first time at HIMAC in National Institute of Radiological Sciences. We irradiated XRPIX with high-energy protons up to a total dose of 40 krad, equivalent to 400 years irradiation in orbit. As a result, the energy resolution in full width half maximum at the 5:9 keV degrades by 25 ± 3%, however, is better than the required performance of FORCE, 300 eV at 6 keV. It was also found that the PDD structure XRPIX has better radiation hardness than the previous XRPIX series. In addition, We investigated about the degradation of the energy resolution; it was found that the degradation would be due to increasing energy independent components, for example, readout noise.
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