We report a high-power light-emitting diode (LED) scheme based on aluminum (Al) reflector, commonly used as an
n-GaN ohmic contact. The Cu doped In2O3 (5nm)/ITO (380nm) interlayer was deposited by electron beam evaporator
and subsequently annealed at 500°C After annealing, we sputtered Al (400nm thick)/Ti-W (30nm) on the ITO interlayer
to reflect the visible light. From the systematic experiment and the following analyses with InGaN/GaN multiple-
quantum-well (MQW) LEDs, the reflectance of electrode based Al was measured to be ~ 90% at a wavelength of 450nm,
which is higher than that of the common used Ni/Ag/Pt scheme. The forward- bias voltages of CIO/ITO/Al/Ti-W pelectrodes
were as low as 3.2-3.3V. Furthermore, Al reflector showed higher thermal stability and lower leakage
currents than those of typical Ag reflector, in which the mean leakage current of Ni/Ag and CIO/ITO/Al/Ti-W contacts
were estimated to be 0.54, 0.12uA at an injection current of -5V, respectively.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.