The results of complimentary time-resolved photoluminescence and positron annihilation measurements on Mg-implanted GaN on GaN fabricated using various I/I sequences will be shown to identify the species and quantify the concentrations and minority carrier capture coefficients of major midgap recombination centers (MGRCs) created by the I/I processes. Because vacancy clusters comprised of Ga vacancies (VGa) and N vacancies (VN) such as (VGaVN)3 were assigned as major vacancy-type defects and the room-temperature photoluminescence lifetime for the NBE emission increased with decreasing their concentration, (VGaVN)3 are assigned as major nonradiative recombination centers with electron capture coefficient of 5×10-6 cm3s-1, which is an order of magnitude larger than the hole capture coefficient of VGaVN in n-GaN (6×10-7 cm3s-1).
Financial supports: CSTI-SIP, MEXT (JPJ005357, JPJ009777, JP16H06427, JP21H01826), PNCRD TECHMATSTRATEG-III/0003/2019-00 and PNSC 2018/29/B/ST5/00338.
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