Under a wide range of process parameters, such as varying total flow rate of gas inlet,
chamber pressure, growth temperature, wafer carrier rotation, it has been finally obtained the
favorable conditions of the better uniform distributions of steady flow and thermal field profiles
for growing high quality compound semiconductor materials inside the reactor. Then, the long-
wavelength metamorphic In0.53Ga0.47As PIN photodetectors grown on semi-insulating GaAs
substrates are successfully demonstrated by low temperature InP buffer technology. The active
area of this photodetector is 50μm×50μm and the thickness of In0.53Ga0.47As adsorption layer is
300 nm. The 3dB bandwidth of frequency response reaches 6GHz. The responsivity of 0.12
A/W to 1550 nm optical radiation, corresponding to the external quantum efficiency of 9.6%,
was achieved.
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