In this study, growth of crack-free AlGaN-based UVC LEDs using face-to-face high-temperature annealed AlN templates on 6-inch sapphire substrates was investigated by production scale metal-organic chemical vapor deposition (MOCVD). The utilization of face-to-face annealed sputtered-deposited thin AlN films templates successfully mitigated wafer bowing, leading to crack-free growth. Additionally, single-peak UVC emissions were obtained in the growth of 6-inch × 7-wafers, and the in-plane uniformity of (Max – Min) / Average was approximately 1.6%. Face-to-face high-temperature annealed AlN proves to be suitable for growing large-diameter UVC LEDs wafers, paving the way for mass production.
Through development effort of MOCVD for LED application, we attempt to find new application towards post COVID-19. UVLED has feature of small size and high speed response which is different from mercury lamps while output power and/or wall plug efficiency is not matured. Development status of MOCVD and its process for UVLED process is presented. Ex-situ high temperature furnace for AlN template exhibit excellent crystalline quality. Ex-situ dry cleaning tool is utilized for cleaning MOCVD components without Cl contamination.
Challenges and opportunities of MOVPE and THVPE/HVPE for nitride light emitting devices are discussed. Attempts to grow uniform and high quality epitaxial layers for both visible and UV range are presented. In order to examine the possibility of using a bulk GaN substrate, cost parity condition of GaN on GaN LED compared with LED on sapphire is presented in terms of a lumen per dollar. It is important to improve through-put of HVPE for GaN substrate manufacturing. Tri-halide VPE (THVPE) is introduced as a newly evolving technology with a high growth rate of 300μm/h at a high growth temperature of 1250ºC, which may replace HVPE for a bulk GaN substrate. Economical consideration of the comparison of HVPE and THVPE is discussed. Regarding UVC LEDs, there is an option to use a high quality AlN template on sapphire which is fabricated by 1700ºC annealing at nitrogen with a face to face configuration. Possible cost reduction and remaining issue are described.
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