We report, for the first time, experimental FIR detector results based on p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) structures. The MBE grown samples consist of a multilayer (p+- p--p+-p--...) structure. The detector shows high responsivity over a wide wavelength range with a bias tunable cutoff wavelength ((lambda) c). Changing the emitter layer (p+) doping concentration (Ne) will result in different (lambda) cs. For a detector with Ne equals 3 multiplied by 1018 cm-3, an effective quantum efficiency of 9.2% (at 26.3 micrometer) with (lambda) c equals 100 micrometer is obtained. Various experimental results are discussed.
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