We report on recent results on selective structuring of photoresist with femtosecond laser pulses in combination with
conventional UV photolithography. The advantages of both processes can be combined to generate structures covering
lateral dimension from the micron scale up to patterns of millimeter size with high quality in a photoresist double layer
system. The fabrication process is based on a photoresist multilayer system where a negative photoresist is placed on a
thick SU-8 layer. The negative resist layer is patterned by photolithography and the SU-8 layer by means of selective
laser ablation, respectively. An additional thin sacrificial layer of photoresist on the top surface serves as a protective
coating and enables the removal of debris which is deposited on the top surface during laser structuring. After resist
structuring the process parameters of the femtosecond laser is adapted to enable processing of the glass substrate where
drilling of vias and the formation of cavities within the glass substrate is carried out, respectively. This enables resist
patterning and substrate processing within one laser step offering a fast and flexible process. Laser processing
experiments were carried out with a pulse duration of 400 fs and a wavelength of 520 nm. Photolithography was carried
out with a standard mask aligner (MA6, SUESS).
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