A high efficiency, micrometer or submicron scale light emitting diode (LED) is essentially required for the emerging virtual reality and augmented reality. However, conventional LED fabrication methods suffer from a large drop in efficiency on scaling the device size. In this work, we report a N-polar InGaN nanowire micro-scale LED emitting efficiently in the red spectrum. A peak external quantum efficiency of ~1.2% is measured for LEDs emitting at 620nm, with lateral dimensions ~750nm: consisting of just 6-7 InGaN nanowires. This efficiency value is nearly one order of magnitude higher than conventional quantum-well micro-LEDs of similar dimensions operating in this wavelength range.
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