KEYWORDS: 3D mask effects, Grayscale lithography, 3D modeling, Data modeling, 3D microstructuring, 3D acquisition, Semiconductors, Profilometers, Process control, Photoresist processing
Optical grayscale lithography offers the possibility to pattern 3D microstructures at large scale and high throughput for HVM semiconductor industry [1-4]. 3D structures uniformity is of importance to ensure homogeneous and at-best performances of several tens of millions of functional elements. This uniformity can be impacted in part by the optical mask variability. Impact of mask variability can be quantified in terms of Mask Error Enhancement Factor (MEEF) [5] for optical grayscale lithography which can be calculated by using resist contrast curve. It has been shown that MEEF is highly dependent on mask densities [5]. Once the mask is fabricated, the impact of mask variabilities on lithography can be controlled by process optimization. In this paper we evaluate the impact of process parameters on optical grayscale MEEF by theoretical and experimental means.
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