As one of the key parts of display devices, the selection of luminescent materials is crucial to promote the development of display technology. Fully inorganic perovskite quantum dots (QDs) are ideal light-emitting materials for next-generation display devices. However, quantum dots based on CsPbX3 (X=chlorine, bromine, iodine) have poor stability and are vulnerable to external environmental erosion (such as oxygen, water) decomposition, damaging optical properties. In this work, we used mesoporous silica to protect perovskite by growing CsPbBrxI3-x in situ in mesoporous silica. Compared with the red perovskite quantum dots synthesized by traditional methods, the stability was improved, More than 96% of the PL intensity was maintained after 30 days of storage under environmental conditions. There was no significant change after continuous heating at 100°C for 60 min, and more than 80% of the PL intensity was maintained after 5W blue light irradiation for 48 h at 365 nm excitation wavelength.
Nickel oxide (NiOx) is a very promising material for hole transport layer (HTL) in perovskite light-emitting diodes (PeLEDs). However, its device performance is limited by the agglomeration of nickel oxide nanoparticles (NPs) and the poor quality of perovskite films deposited on nickel oxide. In this paper, 1-hydroxyethyl-3-methylimidazolium tetrafluoroborate ionic liquid (IL) was introduced into NiOx dispersions as a surfactant to enhance the dispersion of NPs and improve the topographic quality of NiOx films. Meanwhile, IL can interact with uncoordinated Ni and Pb at the NiOx/perovskite interface, which contributes to the formation of high-quality perovskite films for efficient carrier radiation recombination. As a result, we achieve NiOx-based blue PeLEDs with a maximum efficiency of 4.2% and a maximum luminance (Lmax) of 703 cd m-2 . This work contributes to an efficient approach to optimize the dispersion of NiOx NPs as well as the interface between NiOx and perovskite for highly efficient blue PeLEDs.
SnO2 nanoparticles (NPs) have emerged as promising electron transport materials for quantum dot light-emitting diodes (QLEDs), but usually encountering poor solution stability against the compatibility of the device fabrication process. In this work, we have successfully synthesized uniformly sized and distributed SnO2(o-SnO2) NPs by employing tin 2-ethyl hexanoate (an organotin compound) precursor with the sol-gel method. The obtained o-SnO2 NPs have superior stability over the conventional SnO2 (c-SnO2) NPs synthesized by a hydrothermal method. In detail, the o-SnO2 NPs can be stably dispersed in ethanol without further addition of dispersant and remain transparent even stored in air for several weeks. Furthermore, the o-SnO2 NPs have been adopted to achieve high-quality electron transport layers (ETLs) with smooth and dense films, which showed a roughness of 1.9 nm, much smaller than 6.53 nm of the c-SnO2 films, showing a competitive candidate for efficient ETLs toward high-performance QLEDs.
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