We demonstrate the 4-stage traveling wave photodetector (TWPD) with monolithically integrated bias circuitry network based on a silicon photonics process. A bias circuitry network comprised of inductors is integrated at the input terminal to provide the bias voltage for device while prevent the leak of the RF signal into the voltage circuitry. Experimentally, the maximum RF powers of load terminal are 8 dB higher than input end at high frequencies, validated the effectiveness of RF-choke.
We demonstrate a single chip silicon-based optical single sideband (OSSB) modulator which is composed of a branch line coupler (BLC) and a silicon dual-parallel Mach-Zehnder modulator (DP-MZM). Benefit from the powerful tool of optical domain compensation we propose, the constrains such as power imbalance and phase offset of BLC are eliminated. As a result, we realize a fully functional OSSB chip to implement full carrier OSSB (FC-OSSB) and suppressed carrier OSSB (SC-OSSB) modulations. The maximum sideband suppression ratio (SSR) of 35 dB is derived at 21 GHz.
We demonstrate the 4-stage and 8-stage silicon traveling-wave photodetectors (TWPDs) with inductive gain peaking technique. Compared with un-peaked TWPDs, the bandwidths of 4-stage and 8-stage TWPDs integrated with inductors are improved from 32 GHz to 44 GHz, and from 16GHz to 24 GHz, respectively. It is experimentally validated that gain peaking is an effective technology to improve bandwidths for multiple-stage TWPDs.
We present that the linearity of silicon ring modulators in microwave photonics links can be improved by manipulating the quality factor in the cavity. By reducing Q factors of silicon ring modulators from 11000 to 5880 and tuning the operation wavelength for modulation, the measured Spurious-Free Dynamic Ranges of the third-order intermodulation distortion are improved from 98.5 dB·Hz2/3 to 104.3 dB·Hz2/3 and from 90.6 dB·Hz2/3 to 94.7 dB·Hz2/3 at 1 GHz and 10 GHz, respectively.
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